Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 298-300 |
| Seitenumfang | 3 |
| Fachzeitschrift | Physica Status Solidi - Rapid Research Letters |
| Jahrgang | 5 |
| Ausgabenummer | 8 |
| Frühes Online-Datum | 13 Juli 2011 |
| Publikationsstatus | Veröffentlicht - 3 Aug. 2011 |
Abstract
Atomic-layer-deposited aluminum oxide (AlOx) layers are implemented between the phosphorous-diffused n+-emitter and the Al contact of passivated emitter and rear silicon solar cells. The increase in open-circuit voltage Voc of 12 mV for solar cells with the Al/AlOx/n+-Si tunnel contact compared to contacts without AlOx layer indicates contact passivation by the implemented AlOx. For the optimal AlOx layer thickness of 0.24 nm we achieve an independently confirmed energy conversion efficiency of 21.7% and a Voc of 673 mV. For AlOx thicknesses larger than 0.24 nm the tunnel probability decreases, resulting in a larger series resistance.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Allgemeine Materialwissenschaften
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
in: Physica Status Solidi - Rapid Research Letters, Jahrgang 5, Nr. 8, 03.08.2011, S. 298-300.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Contact passivation in silicon solar cells using atomic-layer-deposited aluminum oxide layers
AU - Zielke, Dimitri
AU - Petermann, Jan Hendrik
AU - Werner, Florian
AU - Veith, Boris
AU - Brendel, Rolf
AU - Schmidt, Jan
PY - 2011/8/3
Y1 - 2011/8/3
N2 - Atomic-layer-deposited aluminum oxide (AlOx) layers are implemented between the phosphorous-diffused n+-emitter and the Al contact of passivated emitter and rear silicon solar cells. The increase in open-circuit voltage Voc of 12 mV for solar cells with the Al/AlOx/n+-Si tunnel contact compared to contacts without AlOx layer indicates contact passivation by the implemented AlOx. For the optimal AlOx layer thickness of 0.24 nm we achieve an independently confirmed energy conversion efficiency of 21.7% and a Voc of 673 mV. For AlOx thicknesses larger than 0.24 nm the tunnel probability decreases, resulting in a larger series resistance.
AB - Atomic-layer-deposited aluminum oxide (AlOx) layers are implemented between the phosphorous-diffused n+-emitter and the Al contact of passivated emitter and rear silicon solar cells. The increase in open-circuit voltage Voc of 12 mV for solar cells with the Al/AlOx/n+-Si tunnel contact compared to contacts without AlOx layer indicates contact passivation by the implemented AlOx. For the optimal AlOx layer thickness of 0.24 nm we achieve an independently confirmed energy conversion efficiency of 21.7% and a Voc of 673 mV. For AlOx thicknesses larger than 0.24 nm the tunnel probability decreases, resulting in a larger series resistance.
KW - Aluminum oxide
KW - Atomic layer deposition
KW - Contact passivation
KW - Silicon
KW - Solar cells
UR - http://www.scopus.com/inward/record.url?scp=79961049007&partnerID=8YFLogxK
U2 - 10.1002/pssr.201105285
DO - 10.1002/pssr.201105285
M3 - Article
AN - SCOPUS:79961049007
VL - 5
SP - 298
EP - 300
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
SN - 1862-6254
IS - 8
ER -