Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 194-199 |
| Seitenumfang | 6 |
| Fachzeitschrift | Journal of crystal growth |
| Jahrgang | 143 |
| Ausgabenummer | 3-4 |
| Publikationsstatus | Veröffentlicht - 2 Okt. 1994 |
| Extern publiziert | Ja |
Abstract
Thin epitaxial Si1-xGex layers were grown on Si(001) substrates and analysed with transmission electron microscopy. We show that the critical thickness for perfect two-dimensional pseudomorphic Si1-xGex layer growth depends on two different mechanisms for strain relief. For low Ge concentrations (x<50%) the critical thickness is determined by the formation of misfit dislocations, whereas for high Ge concentrations it is rather governed by the formation of Stranski-Krastanov islands. In the concentration range between 50% and 60% both mechanisms become equally likely. We show that the critical Stranski-Krastanov thickness increases with decreasing lattice mismatch, in agreement with recent theoretical predictions.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Chemie (insg.)
- Anorganische Chemie
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Journal of crystal growth, Jahrgang 143, Nr. 3-4, 02.10.1994, S. 194-199.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Considerations about the critical thickness for pseudomorphic Si1-xGex growth on Si(001)
AU - Osten, H. J.
AU - Zeindl, H. P.
AU - Bugiel, E.
PY - 1994/10/2
Y1 - 1994/10/2
N2 - Thin epitaxial Si1-xGex layers were grown on Si(001) substrates and analysed with transmission electron microscopy. We show that the critical thickness for perfect two-dimensional pseudomorphic Si1-xGex layer growth depends on two different mechanisms for strain relief. For low Ge concentrations (x<50%) the critical thickness is determined by the formation of misfit dislocations, whereas for high Ge concentrations it is rather governed by the formation of Stranski-Krastanov islands. In the concentration range between 50% and 60% both mechanisms become equally likely. We show that the critical Stranski-Krastanov thickness increases with decreasing lattice mismatch, in agreement with recent theoretical predictions.
AB - Thin epitaxial Si1-xGex layers were grown on Si(001) substrates and analysed with transmission electron microscopy. We show that the critical thickness for perfect two-dimensional pseudomorphic Si1-xGex layer growth depends on two different mechanisms for strain relief. For low Ge concentrations (x<50%) the critical thickness is determined by the formation of misfit dislocations, whereas for high Ge concentrations it is rather governed by the formation of Stranski-Krastanov islands. In the concentration range between 50% and 60% both mechanisms become equally likely. We show that the critical Stranski-Krastanov thickness increases with decreasing lattice mismatch, in agreement with recent theoretical predictions.
UR - http://www.scopus.com/inward/record.url?scp=0028761613&partnerID=8YFLogxK
U2 - 10.1016/0022-0248(94)90055-8
DO - 10.1016/0022-0248(94)90055-8
M3 - Article
AN - SCOPUS:0028761613
VL - 143
SP - 194
EP - 199
JO - Journal of crystal growth
JF - Journal of crystal growth
SN - 0022-0248
IS - 3-4
ER -