Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 276-279 |
| Seitenumfang | 4 |
| Fachzeitschrift | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Jahrgang | 7 |
| Ausgabenummer | 2 |
| Publikationsstatus | Veröffentlicht - 10 Feb. 2010 |
| Veranstaltung | 12th International Conference on the Formation of Semiconductor Interfaces: From Semiconductor to Nanoscience and Applications with Biology, ICFSI-12 - Weimar, Deutschland Dauer: 5 Juli 2009 → 10 Juli 2009 Konferenznummer: 12 |
Abstract
Today, most fabricated solar cells are made of crystalline Silicon (c-Si) wafers. Electronic passivation of defect states at interfaces is a major issue in recent cell development. A current topic is surface passivation using hydrogenated amorphous Silicon (a-Si:H). The purpose of this paper is to describe recombination at the a-Si:H/c-Si interface by a comprehensive model considering recombination via amphoteric defects. The density of defect states at the interface (Dit) is modeled via the Defect-Pool-Model(DPM), adapted to a-Si:H/c-Si interfaces by fitting to published experimental data. Since ourmodel accounts for the amphoteric nature of defects at the hetero-interface, and approximates Dit by a physical model, parameters are physical more meaningful and allow for an investigation of measured recombination properties. A numerical comparison between different recombination models shows that using amphoteric recombination statistics is more generally applicable. The purpose is to apply the model in numerical semiconductor device simulators for accurate modeling of a-Si:H passivated c-Si solar cells. Limitations of cell performance due to interface recombination can then be traced back to physical parameters which helps to optimize cell designs.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physica Status Solidi (C) Current Topics in Solid State Physics, Jahrgang 7, Nr. 2, 10.02.2010, S. 276-279.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - Comprehensive model for interface recombination at a-Si:H/c-Si interfaces based on amphoteric defects
AU - Steingrube, S.
AU - Steingrube, D. S.
AU - Brendel, R.
AU - Altermatt, P. P.
N1 - Conference code: 12
PY - 2010/2/10
Y1 - 2010/2/10
N2 - Today, most fabricated solar cells are made of crystalline Silicon (c-Si) wafers. Electronic passivation of defect states at interfaces is a major issue in recent cell development. A current topic is surface passivation using hydrogenated amorphous Silicon (a-Si:H). The purpose of this paper is to describe recombination at the a-Si:H/c-Si interface by a comprehensive model considering recombination via amphoteric defects. The density of defect states at the interface (Dit) is modeled via the Defect-Pool-Model(DPM), adapted to a-Si:H/c-Si interfaces by fitting to published experimental data. Since ourmodel accounts for the amphoteric nature of defects at the hetero-interface, and approximates Dit by a physical model, parameters are physical more meaningful and allow for an investigation of measured recombination properties. A numerical comparison between different recombination models shows that using amphoteric recombination statistics is more generally applicable. The purpose is to apply the model in numerical semiconductor device simulators for accurate modeling of a-Si:H passivated c-Si solar cells. Limitations of cell performance due to interface recombination can then be traced back to physical parameters which helps to optimize cell designs.
AB - Today, most fabricated solar cells are made of crystalline Silicon (c-Si) wafers. Electronic passivation of defect states at interfaces is a major issue in recent cell development. A current topic is surface passivation using hydrogenated amorphous Silicon (a-Si:H). The purpose of this paper is to describe recombination at the a-Si:H/c-Si interface by a comprehensive model considering recombination via amphoteric defects. The density of defect states at the interface (Dit) is modeled via the Defect-Pool-Model(DPM), adapted to a-Si:H/c-Si interfaces by fitting to published experimental data. Since ourmodel accounts for the amphoteric nature of defects at the hetero-interface, and approximates Dit by a physical model, parameters are physical more meaningful and allow for an investigation of measured recombination properties. A numerical comparison between different recombination models shows that using amphoteric recombination statistics is more generally applicable. The purpose is to apply the model in numerical semiconductor device simulators for accurate modeling of a-Si:H passivated c-Si solar cells. Limitations of cell performance due to interface recombination can then be traced back to physical parameters which helps to optimize cell designs.
UR - http://www.scopus.com/inward/record.url?scp=77954342823&partnerID=8YFLogxK
U2 - 10.1002/pssc.200982486
DO - 10.1002/pssc.200982486
M3 - Conference article
AN - SCOPUS:77954342823
VL - 7
SP - 276
EP - 279
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
SN - 1862-6351
IS - 2
T2 - 12th International Conference on the Formation of Semiconductor Interfaces: From Semiconductor to Nanoscience and Applications with Biology, ICFSI-12
Y2 - 5 July 2009 through 10 July 2009
ER -