Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion |
| Herausgeber/-innen | K. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski |
| Seiten | 1077-1080 |
| Seitenumfang | 4 |
| Publikationsstatus | Veröffentlicht - 2003 |
| Extern publiziert | Ja |
| Veranstaltung | 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan Dauer: 11 Mai 2003 → 18 Mai 2003 |
Publikationsreihe
| Name | Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion |
|---|---|
| Band | B |
Abstract
Two important aspects of the formation mechanism of the metastable defect specific to boron-doped Czochralski silicon (Cz-Si) are investigated in detail. In the first part of the paper the impact of boron and oxygen on the defect formation process is investigated. Lifetime measurements performed on a large number of different silicon materials yield a quadratic dependence of the light-induced metastable defect concentration Nt* on the interstitial oxygen concentration [Oi] for samples with oxygen concentrations greater than 4×1017 cm-3 while for samples with lower oxygen concentrations the dependence is found to be almost linear. All samples show a linear dependence of Nt* on the substitutional boron concentration. The second part of the paper is devoted to the fast performance loss at the beginning of the degradation process. A thorough analysis of temperature-dependent measurements of the degradation of the open-circuit voltage of Cz-Si solar cells during illumination reveals a two-step mechanism. While the time constant of the fast initial degradation is found to be independent of temperature, an activation energy of 0.37 eV is determined for the slower degradation process.
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Allgemeiner Maschinenbau
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- RIS
Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. Hrsg. / K. Kurokawa; L.L. Kazmerski; B. McNeils; M. Yamaguchi; C. Wronski. 2003. S. 1077-1080 (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion; Band B).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Comprehensive analysis of the impact of boron and oxygen on the metastable defect in Cz silicon
AU - Bothe, Karsten
AU - Schmidt, Jan
AU - Hezel, Rudolf
PY - 2003
Y1 - 2003
N2 - Two important aspects of the formation mechanism of the metastable defect specific to boron-doped Czochralski silicon (Cz-Si) are investigated in detail. In the first part of the paper the impact of boron and oxygen on the defect formation process is investigated. Lifetime measurements performed on a large number of different silicon materials yield a quadratic dependence of the light-induced metastable defect concentration Nt* on the interstitial oxygen concentration [Oi] for samples with oxygen concentrations greater than 4×1017 cm-3 while for samples with lower oxygen concentrations the dependence is found to be almost linear. All samples show a linear dependence of Nt* on the substitutional boron concentration. The second part of the paper is devoted to the fast performance loss at the beginning of the degradation process. A thorough analysis of temperature-dependent measurements of the degradation of the open-circuit voltage of Cz-Si solar cells during illumination reveals a two-step mechanism. While the time constant of the fast initial degradation is found to be independent of temperature, an activation energy of 0.37 eV is determined for the slower degradation process.
AB - Two important aspects of the formation mechanism of the metastable defect specific to boron-doped Czochralski silicon (Cz-Si) are investigated in detail. In the first part of the paper the impact of boron and oxygen on the defect formation process is investigated. Lifetime measurements performed on a large number of different silicon materials yield a quadratic dependence of the light-induced metastable defect concentration Nt* on the interstitial oxygen concentration [Oi] for samples with oxygen concentrations greater than 4×1017 cm-3 while for samples with lower oxygen concentrations the dependence is found to be almost linear. All samples show a linear dependence of Nt* on the substitutional boron concentration. The second part of the paper is devoted to the fast performance loss at the beginning of the degradation process. A thorough analysis of temperature-dependent measurements of the degradation of the open-circuit voltage of Cz-Si solar cells during illumination reveals a two-step mechanism. While the time constant of the fast initial degradation is found to be independent of temperature, an activation energy of 0.37 eV is determined for the slower degradation process.
UR - http://www.scopus.com/inward/record.url?scp=6444240871&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:6444240871
SN - 4990181603
SN - 9784990181604
T3 - Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion
SP - 1077
EP - 1080
BT - Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
A2 - Kurokawa, K.
A2 - Kazmerski, L.L.
A2 - McNeils, B.
A2 - Yamaguchi, M.
A2 - Wronski, C.
T2 - 3rd World Conference on Photovoltaic Energy Conversion
Y2 - 11 May 2003 through 18 May 2003
ER -