Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 258-261 |
| Seitenumfang | 4 |
| Fachzeitschrift | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Jahrgang | 27 |
| Ausgabenummer | 1 |
| Publikationsstatus | Veröffentlicht - 9 Feb. 2009 |
| Veranstaltung | 15th WoDIM 2008 Conference - Berlin, Deutschland Dauer: 23 Juni 2008 → 25 Juni 2008 |
Abstract
In this paper, epitaxial gadolinium oxide (Gd2 O3) is reviewed as a potential high- K gate dielectric, both "as deposited" by molecular beam epitaxy as well as after integration into complementary metal oxide semiconductor (CMOS) processes. The material shows promising intrinsic properties, meeting critical ITRS targets for leakage current densities even at subnanometer equivalent oxide thicknesses. These epitaxial oxides can be integrated into a CMOS platform by a "gentle" replacement gate process. While high temperature processing potentially degrades the material, a route toward thermally stable epitaxial Gd2 O3 gate dielectrics is explored by carefully controlling the annealing conditions.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Jahrgang 27, Nr. 1, 09.02.2009, S. 258-261.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Complementary metal oxide semiconductor integration of epitaxial Gd2 O3
AU - Lemme, M. C.
AU - Gottlob, H. D.B.
AU - Echtermeyer, T. J.
AU - Schmidt, M.
AU - Kurz, H.
AU - Endres, R.
AU - Schwalke, U.
AU - Czernohorkky, M.
AU - Tetzlaff, D.
AU - Osten, H. J.
N1 - Funding Information: This work has been funded by the German Federal Ministry of Education and Research (BMBF) in the Project MEGA EPOS (www.megaepos.de).
PY - 2009/2/9
Y1 - 2009/2/9
N2 - In this paper, epitaxial gadolinium oxide (Gd2 O3) is reviewed as a potential high- K gate dielectric, both "as deposited" by molecular beam epitaxy as well as after integration into complementary metal oxide semiconductor (CMOS) processes. The material shows promising intrinsic properties, meeting critical ITRS targets for leakage current densities even at subnanometer equivalent oxide thicknesses. These epitaxial oxides can be integrated into a CMOS platform by a "gentle" replacement gate process. While high temperature processing potentially degrades the material, a route toward thermally stable epitaxial Gd2 O3 gate dielectrics is explored by carefully controlling the annealing conditions.
AB - In this paper, epitaxial gadolinium oxide (Gd2 O3) is reviewed as a potential high- K gate dielectric, both "as deposited" by molecular beam epitaxy as well as after integration into complementary metal oxide semiconductor (CMOS) processes. The material shows promising intrinsic properties, meeting critical ITRS targets for leakage current densities even at subnanometer equivalent oxide thicknesses. These epitaxial oxides can be integrated into a CMOS platform by a "gentle" replacement gate process. While high temperature processing potentially degrades the material, a route toward thermally stable epitaxial Gd2 O3 gate dielectrics is explored by carefully controlling the annealing conditions.
UR - http://www.scopus.com/inward/record.url?scp=59949096439&partnerID=8YFLogxK
U2 - 10.1116/1.3054350
DO - 10.1116/1.3054350
M3 - Article
AN - SCOPUS:59949096439
VL - 27
SP - 258
EP - 261
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
SN - 1071-1023
IS - 1
T2 - 15th WoDIM 2008 Conference
Y2 - 23 June 2008 through 25 June 2008
ER -