Comparison of the thermal stability of single Al2O3 layers and Al2O3/SiNx stacks for the surface passiviation of silicon

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autoren

  • Boris Veith
  • Florian Werner
  • Dimitri Zielke
  • Rolf Brendel
  • Jan Schmidt

Organisationseinheiten

Externe Organisationen

  • Institut für Solarenergieforschung GmbH (ISFH)
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Details

OriginalspracheEnglisch
Seiten (von - bis)307-312
Seitenumfang6
FachzeitschriftEnergy Procedia
Jahrgang8
PublikationsstatusVeröffentlicht - 2011

Abstract

We measure surface recombination velocities (SRVs) below 10 cm/s on low-resistivity (1.4 Ωcm) p-type crystalline silicon wafers passivated with plasma-assisted and thermal atomic layer deposited (ALD) aluminium oxide (Al2O3) films. Ultrathin Al2O3 films (< 5 nm) are particularly relevant for the implementation into solar cells, as the deposition rate of the ALD process is very low compared to e.g. plasma-enhanced chemical vapor deposition (PECVD). Hence, we examine the passivation quality of a stack consisting of an ultrathin Al2O 3 passivation layer deposited by ALD and a SiNx capping layer deposited by PECVD. Our experiments show a substantial improvement of the thermal stability during firing at 810°C for the Al2O 3/SiNx stacks compared to a single Al2O 3 layer. We report on a 'regeneration effect' observed for Al 2O3 single layers after firing, where the degraded passivation is significantly improved after annealing at 400°C and also by illumination at room temperature using a halogen lamp. Nevertheless, for Al 2O3/SiNx stacks we measure SRVs < 15 cm/s after firing, whereas for Al2O3 single layers the regenerated SRVs are in the range of 10-30 cm/s. Al2O 3/SiNx stacks are hence ideally suited for the implementation into industrial-type silicon solar cells, although 'regenerated' Al2O3 single layers should result in a comparable cell performance.

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Comparison of the thermal stability of single Al2O3 layers and Al2O3/SiNx stacks for the surface passiviation of silicon. / Veith, Boris; Werner, Florian; Zielke, Dimitri et al.
in: Energy Procedia, Jahrgang 8, 2011, S. 307-312.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Veith B, Werner F, Zielke D, Brendel R, Schmidt J. Comparison of the thermal stability of single Al2O3 layers and Al2O3/SiNx stacks for the surface passiviation of silicon. Energy Procedia. 2011;8:307-312. doi: 10.1016/j.egypro.2011.06.141
Veith, Boris ; Werner, Florian ; Zielke, Dimitri et al. / Comparison of the thermal stability of single Al2O3 layers and Al2O3/SiNx stacks for the surface passiviation of silicon. in: Energy Procedia. 2011 ; Jahrgang 8. S. 307-312.
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title = "Comparison of the thermal stability of single Al2O3 layers and Al2O3/SiNx stacks for the surface passiviation of silicon",
abstract = "We measure surface recombination velocities (SRVs) below 10 cm/s on low-resistivity (1.4 Ωcm) p-type crystalline silicon wafers passivated with plasma-assisted and thermal atomic layer deposited (ALD) aluminium oxide (Al2O3) films. Ultrathin Al2O3 films (< 5 nm) are particularly relevant for the implementation into solar cells, as the deposition rate of the ALD process is very low compared to e.g. plasma-enhanced chemical vapor deposition (PECVD). Hence, we examine the passivation quality of a stack consisting of an ultrathin Al2O 3 passivation layer deposited by ALD and a SiNx capping layer deposited by PECVD. Our experiments show a substantial improvement of the thermal stability during firing at 810°C for the Al2O 3/SiNx stacks compared to a single Al2O 3 layer. We report on a 'regeneration effect' observed for Al 2O3 single layers after firing, where the degraded passivation is significantly improved after annealing at 400°C and also by illumination at room temperature using a halogen lamp. Nevertheless, for Al 2O3/SiNx stacks we measure SRVs < 15 cm/s after firing, whereas for Al2O3 single layers the regenerated SRVs are in the range of 10-30 cm/s. Al2O 3/SiNx stacks are hence ideally suited for the implementation into industrial-type silicon solar cells, although 'regenerated' Al2O3 single layers should result in a comparable cell performance.",
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T1 - Comparison of the thermal stability of single Al2O3 layers and Al2O3/SiNx stacks for the surface passiviation of silicon

AU - Veith, Boris

AU - Werner, Florian

AU - Zielke, Dimitri

AU - Brendel, Rolf

AU - Schmidt, Jan

N1 - Funding Information: Funding was provided by the State of Lower Saxony and the German Ministry for the Environment,

PY - 2011

Y1 - 2011

N2 - We measure surface recombination velocities (SRVs) below 10 cm/s on low-resistivity (1.4 Ωcm) p-type crystalline silicon wafers passivated with plasma-assisted and thermal atomic layer deposited (ALD) aluminium oxide (Al2O3) films. Ultrathin Al2O3 films (< 5 nm) are particularly relevant for the implementation into solar cells, as the deposition rate of the ALD process is very low compared to e.g. plasma-enhanced chemical vapor deposition (PECVD). Hence, we examine the passivation quality of a stack consisting of an ultrathin Al2O 3 passivation layer deposited by ALD and a SiNx capping layer deposited by PECVD. Our experiments show a substantial improvement of the thermal stability during firing at 810°C for the Al2O 3/SiNx stacks compared to a single Al2O 3 layer. We report on a 'regeneration effect' observed for Al 2O3 single layers after firing, where the degraded passivation is significantly improved after annealing at 400°C and also by illumination at room temperature using a halogen lamp. Nevertheless, for Al 2O3/SiNx stacks we measure SRVs < 15 cm/s after firing, whereas for Al2O3 single layers the regenerated SRVs are in the range of 10-30 cm/s. Al2O 3/SiNx stacks are hence ideally suited for the implementation into industrial-type silicon solar cells, although 'regenerated' Al2O3 single layers should result in a comparable cell performance.

AB - We measure surface recombination velocities (SRVs) below 10 cm/s on low-resistivity (1.4 Ωcm) p-type crystalline silicon wafers passivated with plasma-assisted and thermal atomic layer deposited (ALD) aluminium oxide (Al2O3) films. Ultrathin Al2O3 films (< 5 nm) are particularly relevant for the implementation into solar cells, as the deposition rate of the ALD process is very low compared to e.g. plasma-enhanced chemical vapor deposition (PECVD). Hence, we examine the passivation quality of a stack consisting of an ultrathin Al2O 3 passivation layer deposited by ALD and a SiNx capping layer deposited by PECVD. Our experiments show a substantial improvement of the thermal stability during firing at 810°C for the Al2O 3/SiNx stacks compared to a single Al2O 3 layer. We report on a 'regeneration effect' observed for Al 2O3 single layers after firing, where the degraded passivation is significantly improved after annealing at 400°C and also by illumination at room temperature using a halogen lamp. Nevertheless, for Al 2O3/SiNx stacks we measure SRVs < 15 cm/s after firing, whereas for Al2O3 single layers the regenerated SRVs are in the range of 10-30 cm/s. Al2O 3/SiNx stacks are hence ideally suited for the implementation into industrial-type silicon solar cells, although 'regenerated' Al2O3 single layers should result in a comparable cell performance.

KW - Aluminum oxide

KW - Silicon

KW - Solar cells

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JO - Energy Procedia

JF - Energy Procedia

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ER -

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