Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 529-536 |
| Seitenumfang | 8 |
| Fachzeitschrift | Progress in Photovoltaics: Research and Applications |
| Jahrgang | 8 |
| Ausgabenummer | 5 |
| Publikationsstatus | Veröffentlicht - 2 Nov. 2000 |
| Extern publiziert | Ja |
Abstract
Plasma enhanced chemical vapor deposited silicon nitride films have been used to passivate both the front and rear surface of simplified PERC silicon solar cells (planar surface, single-step emitter). An independently confirmed open circuit voltage (Voc) of 667 mV was measured, proving the outstanding surface passivation provided by the silicon nitride films. The achieved Voc represents a significant improvement for all-SiN passivated silicon solar cells. A conversion efficiency of 17.8% was obtained. For comparison, similar cells with different passivation schemes, including high quality, thermally grown TCA oxides and thin SiO2/SiN double layers, were also investigated. Open circuit voltages up to 673 mV and conversion efficiencies up to 18.3% were achieved.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Energie (insg.)
- Erneuerbare Energien, Nachhaltigkeit und Umwelt
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: Progress in Photovoltaics: Research and Applications, Jahrgang 8, Nr. 5, 02.11.2000, S. 529-536.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Comparison of the open circuit voltage of simplified PERC cells passivated with PECVD silicon nitride and thermal silicon oxide
AU - Kerr, Mark
AU - Schmidt, Jan
AU - Cuevas, Andres
PY - 2000/11/2
Y1 - 2000/11/2
N2 - Plasma enhanced chemical vapor deposited silicon nitride films have been used to passivate both the front and rear surface of simplified PERC silicon solar cells (planar surface, single-step emitter). An independently confirmed open circuit voltage (Voc) of 667 mV was measured, proving the outstanding surface passivation provided by the silicon nitride films. The achieved Voc represents a significant improvement for all-SiN passivated silicon solar cells. A conversion efficiency of 17.8% was obtained. For comparison, similar cells with different passivation schemes, including high quality, thermally grown TCA oxides and thin SiO2/SiN double layers, were also investigated. Open circuit voltages up to 673 mV and conversion efficiencies up to 18.3% were achieved.
AB - Plasma enhanced chemical vapor deposited silicon nitride films have been used to passivate both the front and rear surface of simplified PERC silicon solar cells (planar surface, single-step emitter). An independently confirmed open circuit voltage (Voc) of 667 mV was measured, proving the outstanding surface passivation provided by the silicon nitride films. The achieved Voc represents a significant improvement for all-SiN passivated silicon solar cells. A conversion efficiency of 17.8% was obtained. For comparison, similar cells with different passivation schemes, including high quality, thermally grown TCA oxides and thin SiO2/SiN double layers, were also investigated. Open circuit voltages up to 673 mV and conversion efficiencies up to 18.3% were achieved.
UR - http://www.scopus.com/inward/record.url?scp=0034268274&partnerID=8YFLogxK
U2 - 10.1002/1099-159X(200009/10)8:5<529::AID-PIP334>3.0.CO;2-6
DO - 10.1002/1099-159X(200009/10)8:5<529::AID-PIP334>3.0.CO;2-6
M3 - Article
AN - SCOPUS:0034268274
VL - 8
SP - 529
EP - 536
JO - Progress in Photovoltaics: Research and Applications
JF - Progress in Photovoltaics: Research and Applications
SN - 1062-7995
IS - 5
ER -