Comparison of SiGe and SiGe:C heterojunction bipolar transistors

Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review

Autoren

  • D. Knoll
  • B. Heinemann
  • K. E. Ehwald
  • B. Tillack
  • P. Schley
  • H. J. Osten

Externe Organisationen

  • Leibniz-Institut für innovative Mikroelektronik (IHP)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)342-346
Seitenumfang5
FachzeitschriftTHIN SOLID FILMS
Jahrgang369
Ausgabenummer1
PublikationsstatusVeröffentlicht - 3 Juli 2000
Extern publiziertJa
VeranstaltungThe International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI) - Miyagi, Japan
Dauer: 12 Sept. 1999 → 17 Sept. 1999

Abstract

We compare the performance of heterojunction bipolar transistors with pure SiGe (SiGe HBTs) with those incorporating C-doped SiGe base layers (SiGe:C HBTs). The transistors were produced in a single-polysilicon technology with implanted, epi-free wells. Doping the SiGe layers with low C concentration ( approximately 0.2%) allows us to use a higher base boron dose than for C-free HBTs, without B outdiffusion from the heteroepitaxial layer. As a result, the device RF performance can be significantly improved. The higher base doping of SiGe:C HBTs increases the peak fmax from around 50 up to more than 80 GHz, and reduces the minimum noise figure (at 10 GHz) from >3 to 2 dB and ring oscillator delays from 21-22 to 12-14 ps. The SiGe:C HBTs also exhibit leakage currents, which are sufficiently low for reliable IC application.

ASJC Scopus Sachgebiete

Zitieren

Comparison of SiGe and SiGe:C heterojunction bipolar transistors. / Knoll, D.; Heinemann, B.; Ehwald, K. E. et al.
in: THIN SOLID FILMS, Jahrgang 369, Nr. 1, 03.07.2000, S. 342-346.

Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review

Knoll, D, Heinemann, B, Ehwald, KE, Tillack, B, Schley, P & Osten, HJ 2000, 'Comparison of SiGe and SiGe:C heterojunction bipolar transistors', THIN SOLID FILMS, Jg. 369, Nr. 1, S. 342-346. https://doi.org/10.1016/S0040-6090(00)00866-X
Knoll, D., Heinemann, B., Ehwald, K. E., Tillack, B., Schley, P., & Osten, H. J. (2000). Comparison of SiGe and SiGe:C heterojunction bipolar transistors. THIN SOLID FILMS, 369(1), 342-346. https://doi.org/10.1016/S0040-6090(00)00866-X
Knoll D, Heinemann B, Ehwald KE, Tillack B, Schley P, Osten HJ. Comparison of SiGe and SiGe:C heterojunction bipolar transistors. THIN SOLID FILMS. 2000 Jul 3;369(1):342-346. doi: 10.1016/S0040-6090(00)00866-X
Knoll, D. ; Heinemann, B. ; Ehwald, K. E. et al. / Comparison of SiGe and SiGe:C heterojunction bipolar transistors. in: THIN SOLID FILMS. 2000 ; Jahrgang 369, Nr. 1. S. 342-346.
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abstract = "We compare the performance of heterojunction bipolar transistors with pure SiGe (SiGe HBTs) with those incorporating C-doped SiGe base layers (SiGe:C HBTs). The transistors were produced in a single-polysilicon technology with implanted, epi-free wells. Doping the SiGe layers with low C concentration ( approximately 0.2%) allows us to use a higher base boron dose than for C-free HBTs, without B outdiffusion from the heteroepitaxial layer. As a result, the device RF performance can be significantly improved. The higher base doping of SiGe:C HBTs increases the peak fmax from around 50 up to more than 80 GHz, and reduces the minimum noise figure (at 10 GHz) from >3 to 2 dB and ring oscillator delays from 21-22 to 12-14 ps. The SiGe:C HBTs also exhibit leakage currents, which are sufficiently low for reliable IC application.",
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TY - JOUR

T1 - Comparison of SiGe and SiGe:C heterojunction bipolar transistors

AU - Knoll, D.

AU - Heinemann, B.

AU - Ehwald, K. E.

AU - Tillack, B.

AU - Schley, P.

AU - Osten, H. J.

PY - 2000/7/3

Y1 - 2000/7/3

N2 - We compare the performance of heterojunction bipolar transistors with pure SiGe (SiGe HBTs) with those incorporating C-doped SiGe base layers (SiGe:C HBTs). The transistors were produced in a single-polysilicon technology with implanted, epi-free wells. Doping the SiGe layers with low C concentration ( approximately 0.2%) allows us to use a higher base boron dose than for C-free HBTs, without B outdiffusion from the heteroepitaxial layer. As a result, the device RF performance can be significantly improved. The higher base doping of SiGe:C HBTs increases the peak fmax from around 50 up to more than 80 GHz, and reduces the minimum noise figure (at 10 GHz) from >3 to 2 dB and ring oscillator delays from 21-22 to 12-14 ps. The SiGe:C HBTs also exhibit leakage currents, which are sufficiently low for reliable IC application.

AB - We compare the performance of heterojunction bipolar transistors with pure SiGe (SiGe HBTs) with those incorporating C-doped SiGe base layers (SiGe:C HBTs). The transistors were produced in a single-polysilicon technology with implanted, epi-free wells. Doping the SiGe layers with low C concentration ( approximately 0.2%) allows us to use a higher base boron dose than for C-free HBTs, without B outdiffusion from the heteroepitaxial layer. As a result, the device RF performance can be significantly improved. The higher base doping of SiGe:C HBTs increases the peak fmax from around 50 up to more than 80 GHz, and reduces the minimum noise figure (at 10 GHz) from >3 to 2 dB and ring oscillator delays from 21-22 to 12-14 ps. The SiGe:C HBTs also exhibit leakage currents, which are sufficiently low for reliable IC application.

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