Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 379-384 |
| Seitenumfang | 6 |
| Fachzeitschrift | Energy Procedia |
| Jahrgang | 27 |
| Publikationsstatus | Veröffentlicht - 2012 |
| Veranstaltung | 2nd International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2012 - Leuven, Belgien Dauer: 3 Apr. 2012 → 5 Apr. 2012 |
Abstract
The deposition rate of the standard (i.e. sequential) atomic layer deposition (ALD) process is very low compared to the plasma-enhanced chemical vapour deposition (PECVD) process. Therefore, as a short- and medium-term perspective, PECVD aluminium oxide (AlOx) films might be better suited for the implementation into industrial-type solar cells than ALD-Al 2O3 films. In this paper, we report results achieved with a newly developed PECVD deposition process for AlOx using an inductively coupled plasma (ICP). We compare the results to high-quality ALDAl2O3 films. We examine a stack consisting of a thin AlOx passivation layer and a PECVD silicon nitride (SiNy) capping layer. Surface recombination velocities below 9 cm/s were measured on low-resistivity (1.4 Ωcm) p-type crystalline silicon wafers passivated either by ICP-PECVD-AlOx films or by ALD-Al2O3 films after annealing at 425°C. Both passivation schemes provide an excellent thermal stability during firing at 910°C with SRVs below 12 cm/s for both, Al2O3/SiNy stacks and single Al 2O3 layers. A fixed negative charge of -4×10 12 cm-2 is measured for ICP-AlOx and ALD-Al2O3, whereas the interface state density is higher for the ICP-AlOx layer with values of 11.0×1011 eV-1cm-2 compared to 1.3×1011 eV -1cm-2 for ALD-Al2O3. Implemented into large-area screen-printed PERC solar cells, an independently confirmed efficiency of 20.1% for ICP-AlOx and an efficiency of 19.6% for ALD-Al2O3 are achieved.
ASJC Scopus Sachgebiete
- Energie (insg.)
- Allgemeine Energie
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in: Energy Procedia, Jahrgang 27, 2012, S. 379-384.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - Comparison of ICP-AlOx and ALD-Al2O3 layers for the rear surface passivation of c-Si solar cells
AU - Veith, B.
AU - Dullweber, T.
AU - Kranz, C.
AU - Werner, F.
AU - Harder, N. P.
AU - Schmidt, J.
AU - Roos, B. F.P.
AU - Dippell, T.
AU - Brendel, R.
N1 - Funding Information: The authors thank U. Baumann, B. Beier, H. Hannebauer, R. Hesse for solar cell processing. This work was supported by the German Federal Ministry for the Environment, Nature Conservation and Nuclear Safety (BMU) under Contract No. 0325296 in cooperation with Solland Solar Cells BV, SolarWorld Innovations GmbH, SCHOTT Solar AG, RENA GmbH and SINGULUS TECHNOLOGIES AG, which is gratefully acknowledged.
PY - 2012
Y1 - 2012
N2 - The deposition rate of the standard (i.e. sequential) atomic layer deposition (ALD) process is very low compared to the plasma-enhanced chemical vapour deposition (PECVD) process. Therefore, as a short- and medium-term perspective, PECVD aluminium oxide (AlOx) films might be better suited for the implementation into industrial-type solar cells than ALD-Al 2O3 films. In this paper, we report results achieved with a newly developed PECVD deposition process for AlOx using an inductively coupled plasma (ICP). We compare the results to high-quality ALDAl2O3 films. We examine a stack consisting of a thin AlOx passivation layer and a PECVD silicon nitride (SiNy) capping layer. Surface recombination velocities below 9 cm/s were measured on low-resistivity (1.4 Ωcm) p-type crystalline silicon wafers passivated either by ICP-PECVD-AlOx films or by ALD-Al2O3 films after annealing at 425°C. Both passivation schemes provide an excellent thermal stability during firing at 910°C with SRVs below 12 cm/s for both, Al2O3/SiNy stacks and single Al 2O3 layers. A fixed negative charge of -4×10 12 cm-2 is measured for ICP-AlOx and ALD-Al2O3, whereas the interface state density is higher for the ICP-AlOx layer with values of 11.0×1011 eV-1cm-2 compared to 1.3×1011 eV -1cm-2 for ALD-Al2O3. Implemented into large-area screen-printed PERC solar cells, an independently confirmed efficiency of 20.1% for ICP-AlOx and an efficiency of 19.6% for ALD-Al2O3 are achieved.
AB - The deposition rate of the standard (i.e. sequential) atomic layer deposition (ALD) process is very low compared to the plasma-enhanced chemical vapour deposition (PECVD) process. Therefore, as a short- and medium-term perspective, PECVD aluminium oxide (AlOx) films might be better suited for the implementation into industrial-type solar cells than ALD-Al 2O3 films. In this paper, we report results achieved with a newly developed PECVD deposition process for AlOx using an inductively coupled plasma (ICP). We compare the results to high-quality ALDAl2O3 films. We examine a stack consisting of a thin AlOx passivation layer and a PECVD silicon nitride (SiNy) capping layer. Surface recombination velocities below 9 cm/s were measured on low-resistivity (1.4 Ωcm) p-type crystalline silicon wafers passivated either by ICP-PECVD-AlOx films or by ALD-Al2O3 films after annealing at 425°C. Both passivation schemes provide an excellent thermal stability during firing at 910°C with SRVs below 12 cm/s for both, Al2O3/SiNy stacks and single Al 2O3 layers. A fixed negative charge of -4×10 12 cm-2 is measured for ICP-AlOx and ALD-Al2O3, whereas the interface state density is higher for the ICP-AlOx layer with values of 11.0×1011 eV-1cm-2 compared to 1.3×1011 eV -1cm-2 for ALD-Al2O3. Implemented into large-area screen-printed PERC solar cells, an independently confirmed efficiency of 20.1% for ICP-AlOx and an efficiency of 19.6% for ALD-Al2O3 are achieved.
KW - Aluminum oxide
KW - Silicon
KW - Solar Cells
KW - Surface passivation
UR - http://www.scopus.com/inward/record.url?scp=84897137824&partnerID=8YFLogxK
U2 - 10.1016/j.egypro.2012.07.080
DO - 10.1016/j.egypro.2012.07.080
M3 - Conference article
AN - SCOPUS:84897137824
VL - 27
SP - 379
EP - 384
JO - Energy Procedia
JF - Energy Procedia
SN - 1876-6102
T2 - 2nd International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2012
Y2 - 3 April 2012 through 5 April 2012
ER -