Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | 2016 21st International Conference on Ion Implantation Technology, IIT 2016 |
| Herausgeber (Verlag) | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (elektronisch) | 9781509020232 |
| Publikationsstatus | Veröffentlicht - 20 März 2017 |
| Veranstaltung | 21st International Conference on Ion Implantation Technology, IIT 2016 - Tainan, Taiwan Dauer: 26 Sept. 2016 → 30 Sept. 2016 |
Publikationsreihe
| Name | Proceedings of the International Conference on Ion Implantation Technology |
|---|
Abstract
Ion implantation of boron is a promising technique for the preparation of p-type emitters in n-type silicon solar cells. Here, experimental emitter saturation current densities are compared with simulated defect densities, namely boron interstitial clusters and dislocation loops. We report on experimental conditions, which allow separating the specific impact of both defect types on the resulting electrical properties after annealing at 1050°C and surface passivation. In that way, dislocation loops are identified to be the dominating defect species under the used implant and annealing conditions.
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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- BibTex
- RIS
2016 21st International Conference on Ion Implantation Technology, IIT 2016. Institute of Electrical and Electronics Engineers Inc., 2017. 7882856 (Proceedings of the International Conference on Ion Implantation Technology).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Comparison of Experimental Emitter Saturation Current Densities and Simulated Defect Densities of Boron-Implanted Emitters
AU - Krügener, Jan
AU - Osten, H. Jörg
AU - Kiefer, Fabian
AU - Peibst, Robby
PY - 2017/3/20
Y1 - 2017/3/20
N2 - Ion implantation of boron is a promising technique for the preparation of p-type emitters in n-type silicon solar cells. Here, experimental emitter saturation current densities are compared with simulated defect densities, namely boron interstitial clusters and dislocation loops. We report on experimental conditions, which allow separating the specific impact of both defect types on the resulting electrical properties after annealing at 1050°C and surface passivation. In that way, dislocation loops are identified to be the dominating defect species under the used implant and annealing conditions.
AB - Ion implantation of boron is a promising technique for the preparation of p-type emitters in n-type silicon solar cells. Here, experimental emitter saturation current densities are compared with simulated defect densities, namely boron interstitial clusters and dislocation loops. We report on experimental conditions, which allow separating the specific impact of both defect types on the resulting electrical properties after annealing at 1050°C and surface passivation. In that way, dislocation loops are identified to be the dominating defect species under the used implant and annealing conditions.
KW - boron interstitial clusters
KW - crystal defects
KW - dislocation loops
KW - Ion implantation
KW - process simulation
KW - silicon
KW - solar cells
UR - http://www.scopus.com/inward/record.url?scp=85018561375&partnerID=8YFLogxK
U2 - 10.1109/iit.2016.7882856
DO - 10.1109/iit.2016.7882856
M3 - Conference contribution
AN - SCOPUS:85018561375
T3 - Proceedings of the International Conference on Ion Implantation Technology
BT - 2016 21st International Conference on Ion Implantation Technology, IIT 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 21st International Conference on Ion Implantation Technology, IIT 2016
Y2 - 26 September 2016 through 30 September 2016
ER -