Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | 48th Annual Laser Damage Symposium Proceedings - Laser-Induced Damage in Optical Materials 2016 |
| Herausgeber (Verlag) | SPIE |
| ISBN (elektronisch) | 9781510604360 |
| Publikationsstatus | Veröffentlicht - 6 Dez. 2016 |
| Veranstaltung | 48th Annual Laser Damage Symposium - Laser-Induced Damage in Optical Materials 2016 - Boulder, USA / Vereinigte Staaten Dauer: 25 Sept. 2016 → 28 Sept. 2016 |
Publikationsreihe
| Name | Proceedings of SPIE - The International Society for Optical Engineering |
|---|---|
| Band | 10014 |
| ISSN (Print) | 0277-786X |
| ISSN (elektronisch) | 1996-756X |
Abstract
Atomic layer deposition (ALD) has been widely studied in Micro-electronics due to its self-Terminating property. ALD also grows film coatings with precise thickness and nodular-free structure, which are desirable properties for high power coatings. The depositing process was studied to produce uniform, stable and economic Al2O3 single layers. The layer properties relevant to high power laser industry were studied and compared with IBS Al2O3 single layers. ALD Al2O3 showed a stable growth of 0.104 nm/cycle, band gap energy of 6.5 eV and tensile stress of about 480 MPa. It also showed a low absorption at wavelength 1064 nm within several ppm, and LIDT above 30 J/cm2. These properties are superior to the reference IBS Al2O3 single layers and indicate a high versatility of ALD Al2O3 for high power coatings.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Informatik (insg.)
- Angewandte Informatik
- Mathematik (insg.)
- Angewandte Mathematik
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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- BibTex
- RIS
48th Annual Laser Damage Symposium Proceedings - Laser-Induced Damage in Optical Materials 2016. SPIE, 2016. 1001421 (Proceedings of SPIE - The International Society for Optical Engineering; Band 10014).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Comparison of ALD and IBS Al2O3 films for high power lasers
AU - Liu, Hao
AU - Jensen, Lars
AU - Becker, Jürgen
AU - Wurz, Marc Christopher
AU - Ma, Ping
AU - Ristau, Detlev
PY - 2016/12/6
Y1 - 2016/12/6
N2 - Atomic layer deposition (ALD) has been widely studied in Micro-electronics due to its self-Terminating property. ALD also grows film coatings with precise thickness and nodular-free structure, which are desirable properties for high power coatings. The depositing process was studied to produce uniform, stable and economic Al2O3 single layers. The layer properties relevant to high power laser industry were studied and compared with IBS Al2O3 single layers. ALD Al2O3 showed a stable growth of 0.104 nm/cycle, band gap energy of 6.5 eV and tensile stress of about 480 MPa. It also showed a low absorption at wavelength 1064 nm within several ppm, and LIDT above 30 J/cm2. These properties are superior to the reference IBS Al2O3 single layers and indicate a high versatility of ALD Al2O3 for high power coatings.
AB - Atomic layer deposition (ALD) has been widely studied in Micro-electronics due to its self-Terminating property. ALD also grows film coatings with precise thickness and nodular-free structure, which are desirable properties for high power coatings. The depositing process was studied to produce uniform, stable and economic Al2O3 single layers. The layer properties relevant to high power laser industry were studied and compared with IBS Al2O3 single layers. ALD Al2O3 showed a stable growth of 0.104 nm/cycle, band gap energy of 6.5 eV and tensile stress of about 480 MPa. It also showed a low absorption at wavelength 1064 nm within several ppm, and LIDT above 30 J/cm2. These properties are superior to the reference IBS Al2O3 single layers and indicate a high versatility of ALD Al2O3 for high power coatings.
KW - Absorption
KW - ALD AlO
KW - IBS AlO
KW - LIDT
KW - Stress
UR - http://www.scopus.com/inward/record.url?scp=85015666949&partnerID=8YFLogxK
U2 - 10.1117/12.2245051
DO - 10.1117/12.2245051
M3 - Conference contribution
AN - SCOPUS:85015666949
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - 48th Annual Laser Damage Symposium Proceedings - Laser-Induced Damage in Optical Materials 2016
PB - SPIE
T2 - 48th Annual Laser Damage Symposium - Laser-Induced Damage in Optical Materials 2016
Y2 - 25 September 2016 through 28 September 2016
ER -