Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 121301 |
| Seiten (von - bis) | 1213011-1213014 |
| Seitenumfang | 4 |
| Fachzeitschrift | Physical Review B - Condensed Matter and Materials Physics |
| Jahrgang | 63 |
| Ausgabenummer | 12 |
| Frühes Online-Datum | 5 März 2001 |
| Publikationsstatus | Veröffentlicht - 15 März 2001 |
Abstract
We have studied the capacitance between a two-dimensional electron system and a gate of field-effect transistors, produced from three different wafers with a single remotely doped GaAs/AlxGa1-xAs heterojunction. In the vicinity of the Landau-level filling factor v=1/2, the increment of the capacitance relative to its zero-magnetic-field value, δC1/2, was found to be insensitive to the carrier density, and close to the value as if the particles are noninteracting. This observation implies that electron-electron interaction affects the compressibility of the zero-field and composite-fermion metallic states in a very similar manner.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physical Review B - Condensed Matter and Materials Physics, Jahrgang 63, Nr. 12, 121301, 15.03.2001, S. 1213011-1213014.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Comparison between the compressibilities of the zero field and composite-fermion metallic states of the two-dimensional electron system
AU - Dorozhkin, S. I.
AU - Smet, J. H.
AU - von Klitzing, K.
AU - Umansky, V.
AU - Haug, R. J.
AU - Ploog, K.
PY - 2001/3/15
Y1 - 2001/3/15
N2 - We have studied the capacitance between a two-dimensional electron system and a gate of field-effect transistors, produced from three different wafers with a single remotely doped GaAs/AlxGa1-xAs heterojunction. In the vicinity of the Landau-level filling factor v=1/2, the increment of the capacitance relative to its zero-magnetic-field value, δC1/2, was found to be insensitive to the carrier density, and close to the value as if the particles are noninteracting. This observation implies that electron-electron interaction affects the compressibility of the zero-field and composite-fermion metallic states in a very similar manner.
AB - We have studied the capacitance between a two-dimensional electron system and a gate of field-effect transistors, produced from three different wafers with a single remotely doped GaAs/AlxGa1-xAs heterojunction. In the vicinity of the Landau-level filling factor v=1/2, the increment of the capacitance relative to its zero-magnetic-field value, δC1/2, was found to be insensitive to the carrier density, and close to the value as if the particles are noninteracting. This observation implies that electron-electron interaction affects the compressibility of the zero-field and composite-fermion metallic states in a very similar manner.
UR - http://www.scopus.com/inward/record.url?scp=0034895523&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.63.121301
DO - 10.1103/PhysRevB.63.121301
M3 - Article
AN - SCOPUS:0034895523
VL - 63
SP - 1213011
EP - 1213014
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 0163-1829
IS - 12
M1 - 121301
ER -