Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 3306-3312 |
| Seitenumfang | 7 |
| Fachzeitschrift | Journal of applied physics |
| Jahrgang | 87 |
| Ausgabenummer | 7 |
| Publikationsstatus | Veröffentlicht - 1 Apr. 2000 |
| Extern publiziert | Ja |
Abstract
We investigated the formation and structure of cobalt suicide (CoSi2) on Si1-yCy. (0≤y ≤0.81%) layers grown by molecular beam epitaxy on Si (001). The incorporation of C in the Si lattice causes the following phenomena during silicidation: (i) the formation of CoSi2 is delayed in temperature scale, as compared to pure Si; (ii) epitaxial CoSi2 grains are formed at T≥600 °C; (iii) a two sublayer structure of CoSi2 is observed, where the upper sublayer contains a very small amount of C and has a homogeneous microstructure, while the lower sublayer, which has a higher C concentration, contains randomly oriented CoSi2 nanocrystallites; (iv) spatial inhomogeneity results in significant variation (within ±40%) in the CoSi2 layer thickness; (v) no strain relaxation in the Si1-yCy layer during silicidation is detected up to 700 °C; and (vi) the distribution of carbon and boron in the semiconductor during silicidation is not changed significantly. The two latter findings show the potential of CoSi2 on Si1-yCy for device application despite the mentioned inhomogeneity in CoSi2 microstructure.
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Ziele für nachhaltige Entwicklung
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in: Journal of applied physics, Jahrgang 87, Nr. 7, 01.04.2000, S. 3306-3312.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Co silicide formation on epitaxial Si1-yCy/Si (001) layers
AU - Roichman, Y.
AU - Berner, A.
AU - Brener, R.
AU - Cytermann, C.
AU - Shilo, D.
AU - Zolotoyabko, E.
AU - Eizenberg, M.
AU - Osten, H. J.
PY - 2000/4/1
Y1 - 2000/4/1
N2 - We investigated the formation and structure of cobalt suicide (CoSi2) on Si1-yCy. (0≤y ≤0.81%) layers grown by molecular beam epitaxy on Si (001). The incorporation of C in the Si lattice causes the following phenomena during silicidation: (i) the formation of CoSi2 is delayed in temperature scale, as compared to pure Si; (ii) epitaxial CoSi2 grains are formed at T≥600 °C; (iii) a two sublayer structure of CoSi2 is observed, where the upper sublayer contains a very small amount of C and has a homogeneous microstructure, while the lower sublayer, which has a higher C concentration, contains randomly oriented CoSi2 nanocrystallites; (iv) spatial inhomogeneity results in significant variation (within ±40%) in the CoSi2 layer thickness; (v) no strain relaxation in the Si1-yCy layer during silicidation is detected up to 700 °C; and (vi) the distribution of carbon and boron in the semiconductor during silicidation is not changed significantly. The two latter findings show the potential of CoSi2 on Si1-yCy for device application despite the mentioned inhomogeneity in CoSi2 microstructure.
AB - We investigated the formation and structure of cobalt suicide (CoSi2) on Si1-yCy. (0≤y ≤0.81%) layers grown by molecular beam epitaxy on Si (001). The incorporation of C in the Si lattice causes the following phenomena during silicidation: (i) the formation of CoSi2 is delayed in temperature scale, as compared to pure Si; (ii) epitaxial CoSi2 grains are formed at T≥600 °C; (iii) a two sublayer structure of CoSi2 is observed, where the upper sublayer contains a very small amount of C and has a homogeneous microstructure, while the lower sublayer, which has a higher C concentration, contains randomly oriented CoSi2 nanocrystallites; (iv) spatial inhomogeneity results in significant variation (within ±40%) in the CoSi2 layer thickness; (v) no strain relaxation in the Si1-yCy layer during silicidation is detected up to 700 °C; and (vi) the distribution of carbon and boron in the semiconductor during silicidation is not changed significantly. The two latter findings show the potential of CoSi2 on Si1-yCy for device application despite the mentioned inhomogeneity in CoSi2 microstructure.
UR - http://www.scopus.com/inward/record.url?scp=0001708033&partnerID=8YFLogxK
U2 - 10.1063/1.372341
DO - 10.1063/1.372341
M3 - Article
AN - SCOPUS:0001708033
VL - 87
SP - 3306
EP - 3312
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
IS - 7
ER -