CMOS integration of epitaxial Gd2O3 high-k gate dielectrics

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • H. D.B. Gottlob
  • T. Echtermeyer
  • T. Mollenhauer
  • J. K. Efavi
  • M. Schmidt
  • T. Wahlbrink
  • M. C. Lemme
  • H. Kurz
  • M. Czernohorsky
  • E. Bugiel
  • H. J. Osten
  • A. Fissel

Organisationseinheiten

Externe Organisationen

  • AMO GmbH
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)979-985
Seitenumfang7
FachzeitschriftSolid-State Electronics
Jahrgang50
Ausgabenummer6
Frühes Online-Datum22 Juni 2006
PublikationsstatusVeröffentlicht - Juni 2006

Abstract

Epitaxial gadolinium oxide (Gd2O3) high-k dielectrics are investigated with respect to their CMOS compatibility in metal oxide semiconductor (MOS) capacitors and field effect transistors (MOSFETs). MOS capacitors with various gate electrodes are exposed to typical CMOS process steps and evaluated with capacitance voltage (CV) and current voltage (JV) measurements. The effects of high temperature processes on thermal stabilities of channel/dielectric and dielectric/gate electrode interfaces is studied in detail. A feasible CMOS process with epitaxial gate oxides and metal gate electrodes is identified and demonstrated by a fully functional n-MOSFET for the first time.

ASJC Scopus Sachgebiete

Zitieren

CMOS integration of epitaxial Gd2O3 high-k gate dielectrics. / Gottlob, H. D.B.; Echtermeyer, T.; Mollenhauer, T. et al.
in: Solid-State Electronics, Jahrgang 50, Nr. 6, 06.2006, S. 979-985.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Gottlob, HDB, Echtermeyer, T, Mollenhauer, T, Efavi, JK, Schmidt, M, Wahlbrink, T, Lemme, MC, Kurz, H, Czernohorsky, M, Bugiel, E, Osten, HJ & Fissel, A 2006, 'CMOS integration of epitaxial Gd2O3 high-k gate dielectrics', Solid-State Electronics, Jg. 50, Nr. 6, S. 979-985. https://doi.org/10.1016/j.sse.2006.04.018
Gottlob, H. D. B., Echtermeyer, T., Mollenhauer, T., Efavi, J. K., Schmidt, M., Wahlbrink, T., Lemme, M. C., Kurz, H., Czernohorsky, M., Bugiel, E., Osten, H. J., & Fissel, A. (2006). CMOS integration of epitaxial Gd2O3 high-k gate dielectrics. Solid-State Electronics, 50(6), 979-985. https://doi.org/10.1016/j.sse.2006.04.018
Gottlob HDB, Echtermeyer T, Mollenhauer T, Efavi JK, Schmidt M, Wahlbrink T et al. CMOS integration of epitaxial Gd2O3 high-k gate dielectrics. Solid-State Electronics. 2006 Jun;50(6):979-985. Epub 2006 Jun 22. doi: 10.1016/j.sse.2006.04.018
Gottlob, H. D.B. ; Echtermeyer, T. ; Mollenhauer, T. et al. / CMOS integration of epitaxial Gd2O3 high-k gate dielectrics. in: Solid-State Electronics. 2006 ; Jahrgang 50, Nr. 6. S. 979-985.
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abstract = "Epitaxial gadolinium oxide (Gd2O3) high-k dielectrics are investigated with respect to their CMOS compatibility in metal oxide semiconductor (MOS) capacitors and field effect transistors (MOSFETs). MOS capacitors with various gate electrodes are exposed to typical CMOS process steps and evaluated with capacitance voltage (CV) and current voltage (JV) measurements. The effects of high temperature processes on thermal stabilities of channel/dielectric and dielectric/gate electrode interfaces is studied in detail. A feasible CMOS process with epitaxial gate oxides and metal gate electrodes is identified and demonstrated by a fully functional n-MOSFET for the first time.",
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T1 - CMOS integration of epitaxial Gd2O3 high-k gate dielectrics

AU - Gottlob, H. D.B.

AU - Echtermeyer, T.

AU - Mollenhauer, T.

AU - Efavi, J. K.

AU - Schmidt, M.

AU - Wahlbrink, T.

AU - Lemme, M. C.

AU - Kurz, H.

AU - Czernohorsky, M.

AU - Bugiel, E.

AU - Osten, H. J.

AU - Fissel, A.

N1 - Funding Information: The authors acknowledge financial support by the German Federal Ministry of Education and Research (BMBF project “KrisMOS”, 01 M 3142), AMD Saxony LLC & Co. KG, Infineon Technologies AG and Freescale Halbleiter Deutschland GmbH. Furthermore, FIB preparation, TEM, and EDX analysis by M. Bückins, F. Dorn, T. Weirich, and J. Mayer from GFE, RWTH Aachen University, is gratefully acknowledged.

PY - 2006/6

Y1 - 2006/6

N2 - Epitaxial gadolinium oxide (Gd2O3) high-k dielectrics are investigated with respect to their CMOS compatibility in metal oxide semiconductor (MOS) capacitors and field effect transistors (MOSFETs). MOS capacitors with various gate electrodes are exposed to typical CMOS process steps and evaluated with capacitance voltage (CV) and current voltage (JV) measurements. The effects of high temperature processes on thermal stabilities of channel/dielectric and dielectric/gate electrode interfaces is studied in detail. A feasible CMOS process with epitaxial gate oxides and metal gate electrodes is identified and demonstrated by a fully functional n-MOSFET for the first time.

AB - Epitaxial gadolinium oxide (Gd2O3) high-k dielectrics are investigated with respect to their CMOS compatibility in metal oxide semiconductor (MOS) capacitors and field effect transistors (MOSFETs). MOS capacitors with various gate electrodes are exposed to typical CMOS process steps and evaluated with capacitance voltage (CV) and current voltage (JV) measurements. The effects of high temperature processes on thermal stabilities of channel/dielectric and dielectric/gate electrode interfaces is studied in detail. A feasible CMOS process with epitaxial gate oxides and metal gate electrodes is identified and demonstrated by a fully functional n-MOSFET for the first time.

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KW - Epitaxial gate dielectric

KW - Gadolinium oxide (GdO)

KW - High-k gate dielectric

KW - Metal gate electrode

KW - Silicon on insulator (SOI)

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