Details
Originalsprache | Englisch |
---|---|
Seiten (von - bis) | 979-985 |
Seitenumfang | 7 |
Fachzeitschrift | Solid-State Electronics |
Jahrgang | 50 |
Ausgabenummer | 6 |
Frühes Online-Datum | 22 Juni 2006 |
Publikationsstatus | Veröffentlicht - Juni 2006 |
Abstract
Epitaxial gadolinium oxide (Gd2O3) high-k dielectrics are investigated with respect to their CMOS compatibility in metal oxide semiconductor (MOS) capacitors and field effect transistors (MOSFETs). MOS capacitors with various gate electrodes are exposed to typical CMOS process steps and evaluated with capacitance voltage (CV) and current voltage (JV) measurements. The effects of high temperature processes on thermal stabilities of channel/dielectric and dielectric/gate electrode interfaces is studied in detail. A feasible CMOS process with epitaxial gate oxides and metal gate electrodes is identified and demonstrated by a fully functional n-MOSFET for the first time.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Solid-State Electronics, Jahrgang 50, Nr. 6, 06.2006, S. 979-985.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - CMOS integration of epitaxial Gd2O3 high-k gate dielectrics
AU - Gottlob, H. D.B.
AU - Echtermeyer, T.
AU - Mollenhauer, T.
AU - Efavi, J. K.
AU - Schmidt, M.
AU - Wahlbrink, T.
AU - Lemme, M. C.
AU - Kurz, H.
AU - Czernohorsky, M.
AU - Bugiel, E.
AU - Osten, H. J.
AU - Fissel, A.
N1 - Funding Information: The authors acknowledge financial support by the German Federal Ministry of Education and Research (BMBF project “KrisMOS”, 01 M 3142), AMD Saxony LLC & Co. KG, Infineon Technologies AG and Freescale Halbleiter Deutschland GmbH. Furthermore, FIB preparation, TEM, and EDX analysis by M. Bückins, F. Dorn, T. Weirich, and J. Mayer from GFE, RWTH Aachen University, is gratefully acknowledged.
PY - 2006/6
Y1 - 2006/6
N2 - Epitaxial gadolinium oxide (Gd2O3) high-k dielectrics are investigated with respect to their CMOS compatibility in metal oxide semiconductor (MOS) capacitors and field effect transistors (MOSFETs). MOS capacitors with various gate electrodes are exposed to typical CMOS process steps and evaluated with capacitance voltage (CV) and current voltage (JV) measurements. The effects of high temperature processes on thermal stabilities of channel/dielectric and dielectric/gate electrode interfaces is studied in detail. A feasible CMOS process with epitaxial gate oxides and metal gate electrodes is identified and demonstrated by a fully functional n-MOSFET for the first time.
AB - Epitaxial gadolinium oxide (Gd2O3) high-k dielectrics are investigated with respect to their CMOS compatibility in metal oxide semiconductor (MOS) capacitors and field effect transistors (MOSFETs). MOS capacitors with various gate electrodes are exposed to typical CMOS process steps and evaluated with capacitance voltage (CV) and current voltage (JV) measurements. The effects of high temperature processes on thermal stabilities of channel/dielectric and dielectric/gate electrode interfaces is studied in detail. A feasible CMOS process with epitaxial gate oxides and metal gate electrodes is identified and demonstrated by a fully functional n-MOSFET for the first time.
KW - CMOS integration
KW - Epitaxial gate dielectric
KW - Gadolinium oxide (GdO)
KW - High-k gate dielectric
KW - Metal gate electrode
KW - Silicon on insulator (SOI)
UR - http://www.scopus.com/inward/record.url?scp=33745761180&partnerID=8YFLogxK
U2 - 10.1016/j.sse.2006.04.018
DO - 10.1016/j.sse.2006.04.018
M3 - Article
AN - SCOPUS:33745761180
VL - 50
SP - 979
EP - 985
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 6
ER -