Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autoren

  • V. V. Bel'kov
  • S. D. Ganichev
  • Petra Schneider
  • C. Back
  • Michael Oestreich
  • Jörg Rudolph
  • Daniel Hägele
  • L. E. Golub
  • W. Wegscheider
  • W. Prettl

Organisationseinheiten

Externe Organisationen

  • RAS - Ioffe Physico Technical Institute
  • Technische Universität München (TUM)
  • Universität Regensburg
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Details

OriginalspracheEnglisch
Seiten (von - bis)283-286
Seitenumfang4
FachzeitschriftSolid State Communications
Jahrgang128
Ausgabenummer8
PublikationsstatusVeröffentlicht - 3 Sept. 2003

Abstract

We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time-resolved photoluminescence. A theoretical model takes into account spin splitting of conduction and valence bands.

ASJC Scopus Sachgebiete

Zitieren

Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells. / Bel'kov, V. V.; Ganichev, S. D.; Schneider, Petra et al.
in: Solid State Communications, Jahrgang 128, Nr. 8, 03.09.2003, S. 283-286.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Bel'kov, VV, Ganichev, SD, Schneider, P, Back, C, Oestreich, M, Rudolph, J, Hägele, D, Golub, LE, Wegscheider, W & Prettl, W 2003, 'Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells', Solid State Communications, Jg. 128, Nr. 8, S. 283-286. https://doi.org/10.1016/j.ssc.2003.08.022
Bel'kov, V. V., Ganichev, S. D., Schneider, P., Back, C., Oestreich, M., Rudolph, J., Hägele, D., Golub, L. E., Wegscheider, W., & Prettl, W. (2003). Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells. Solid State Communications, 128(8), 283-286. https://doi.org/10.1016/j.ssc.2003.08.022
Bel'kov VV, Ganichev SD, Schneider P, Back C, Oestreich M, Rudolph J et al. Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells. Solid State Communications. 2003 Sep 3;128(8):283-286. doi: 10.1016/j.ssc.2003.08.022
Bel'kov, V. V. ; Ganichev, S. D. ; Schneider, Petra et al. / Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells. in: Solid State Communications. 2003 ; Jahrgang 128, Nr. 8. S. 283-286.
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abstract = "We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time-resolved photoluminescence. A theoretical model takes into account spin splitting of conduction and valence bands.",
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Download

TY - JOUR

T1 - Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells

AU - Bel'kov, V. V.

AU - Ganichev, S. D.

AU - Schneider, Petra

AU - Back, C.

AU - Oestreich, Michael

AU - Rudolph, Jörg

AU - Hägele, Daniel

AU - Golub, L. E.

AU - Wegscheider, W.

AU - Prettl, W.

N1 - Funding information: We thank E.L. Ivchenko for helpful discussions. Authors gratefully acknowledge financial support by the Deutsche Forschungsgemeinschaft (DFG), the INTAS and Programme of RAS.

PY - 2003/9/3

Y1 - 2003/9/3

N2 - We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time-resolved photoluminescence. A theoretical model takes into account spin splitting of conduction and valence bands.

AB - We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time-resolved photoluminescence. A theoretical model takes into account spin splitting of conduction and valence bands.

KW - A. Quantum wells

KW - D. Spin-orbit effects

UR - http://www.scopus.com/inward/record.url?scp=0141964005&partnerID=8YFLogxK

U2 - 10.1016/j.ssc.2003.08.022

DO - 10.1016/j.ssc.2003.08.022

M3 - Article

AN - SCOPUS:0141964005

VL - 128

SP - 283

EP - 286

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 8

ER -

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