Charge trapping in ultrathin Gd2O3 high-k dielectric

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • A. N. Nazarov
  • Y. V. Gomeniuk
  • Y. Y. Gomeniuk
  • H. D.B. Gottlob
  • M. Schmidt
  • M. C. Lemme
  • M. Czernohorsky
  • H. J. Osten

Organisationseinheiten

Externe Organisationen

  • Institute of Semiconductors Physics National Academy of Sciences in Ukraine
  • AMO GmbH
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)1968-1971
Seitenumfang4
FachzeitschriftMicroelectronic engineering
Jahrgang84
Ausgabenummer9-10
Frühes Online-Datum30 Mai 2007
PublikationsstatusVeröffentlicht - Sept. 2007

Abstract

Charge trapping in ultrathin high-k Gd2O3 dielectric leading to appearance of hysteresis in C-V curves is studied by capacitance-voltage and current-voltage techniques. It was shown that the large leakage current at a negative gate voltage causes the generation of the positive charge in the dielectric layer, resulting in the respective shift of the C-V curve. The capture cross-section of the hole traps is around 2 × 10-20 cm2. The distribution of the interface states was measured by conductance technique showing the concentration up to 7.5 × 1012 eV-1 cm-2 near the valence band edge.

ASJC Scopus Sachgebiete

Zitieren

Charge trapping in ultrathin Gd2O3 high-k dielectric. / Nazarov, A. N.; Gomeniuk, Y. V.; Gomeniuk, Y. Y. et al.
in: Microelectronic engineering, Jahrgang 84, Nr. 9-10, 09.2007, S. 1968-1971.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Nazarov, AN, Gomeniuk, YV, Gomeniuk, YY, Gottlob, HDB, Schmidt, M, Lemme, MC, Czernohorsky, M & Osten, HJ 2007, 'Charge trapping in ultrathin Gd2O3 high-k dielectric', Microelectronic engineering, Jg. 84, Nr. 9-10, S. 1968-1971. https://doi.org/10.1016/j.mee.2007.04.136
Nazarov, A. N., Gomeniuk, Y. V., Gomeniuk, Y. Y., Gottlob, H. D. B., Schmidt, M., Lemme, M. C., Czernohorsky, M., & Osten, H. J. (2007). Charge trapping in ultrathin Gd2O3 high-k dielectric. Microelectronic engineering, 84(9-10), 1968-1971. https://doi.org/10.1016/j.mee.2007.04.136
Nazarov AN, Gomeniuk YV, Gomeniuk YY, Gottlob HDB, Schmidt M, Lemme MC et al. Charge trapping in ultrathin Gd2O3 high-k dielectric. Microelectronic engineering. 2007 Sep;84(9-10):1968-1971. Epub 2007 Mai 30. doi: 10.1016/j.mee.2007.04.136
Nazarov, A. N. ; Gomeniuk, Y. V. ; Gomeniuk, Y. Y. et al. / Charge trapping in ultrathin Gd2O3 high-k dielectric. in: Microelectronic engineering. 2007 ; Jahrgang 84, Nr. 9-10. S. 1968-1971.
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abstract = "Charge trapping in ultrathin high-k Gd2O3 dielectric leading to appearance of hysteresis in C-V curves is studied by capacitance-voltage and current-voltage techniques. It was shown that the large leakage current at a negative gate voltage causes the generation of the positive charge in the dielectric layer, resulting in the respective shift of the C-V curve. The capture cross-section of the hole traps is around 2 × 10-20 cm2. The distribution of the interface states was measured by conductance technique showing the concentration up to 7.5 × 1012 eV-1 cm-2 near the valence band edge.",
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note = "Funding Information: This work has been partly funded by the European Commission under the frame of the Network of Excellence “SINANO” (Silicon-based Nanodevices, IST-506844) and the German Federal Ministry of Education and Research (BMBF) in the “KrisMOS” project (01M3142).",
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T1 - Charge trapping in ultrathin Gd2O3 high-k dielectric

AU - Nazarov, A. N.

AU - Gomeniuk, Y. V.

AU - Gomeniuk, Y. Y.

AU - Gottlob, H. D.B.

AU - Schmidt, M.

AU - Lemme, M. C.

AU - Czernohorsky, M.

AU - Osten, H. J.

N1 - Funding Information: This work has been partly funded by the European Commission under the frame of the Network of Excellence “SINANO” (Silicon-based Nanodevices, IST-506844) and the German Federal Ministry of Education and Research (BMBF) in the “KrisMOS” project (01M3142).

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Y1 - 2007/9

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AB - Charge trapping in ultrathin high-k Gd2O3 dielectric leading to appearance of hysteresis in C-V curves is studied by capacitance-voltage and current-voltage techniques. It was shown that the large leakage current at a negative gate voltage causes the generation of the positive charge in the dielectric layer, resulting in the respective shift of the C-V curve. The capture cross-section of the hole traps is around 2 × 10-20 cm2. The distribution of the interface states was measured by conductance technique showing the concentration up to 7.5 × 1012 eV-1 cm-2 near the valence band edge.

KW - Charge trapping

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KW - High-k dielectric

KW - Rare earth oxide

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AN - SCOPUS:34248661852

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EP - 1971

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