Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 4977-4981 |
| Seitenumfang | 5 |
| Fachzeitschrift | Journal of applied physics |
| Jahrgang | 82 |
| Ausgabenummer | 10 |
| Publikationsstatus | Veröffentlicht - 15 Nov. 1997 |
| Extern publiziert | Ja |
Abstract
We have investigated the temperature dependencies of charge carrier densities and Hall mobilities in tensile strained Si1-yCy and in compressively strained Si1-x-yGexCy layers. In both cases, the measured charge carrier densities at room temperature are not affected substantially by the addition of a small concentration of carbon (<1%) under identical growth conditions and dopant fluxes. The measured Hall mobilities monotonically decrease with increasing carbon content for electrons in Si1-yCy, and for holes in Si1-x-yGexCy, respectively. Our results indicate that electrically active defects are formed with the addition of carbon. These defects are presumably connected with carbon/Si interstitials or other C-related complexes. It seems to be difficult to attribute the formation of those electrically active defects solely to contaminations originating from the used carbon evaporation source. We observed that donor- and acceptor-like defects are formed in Si1-yCy as well as in Si1-x-yGexCy layers with roughly a constant ratio, independent of source temperature.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
in: Journal of applied physics, Jahrgang 82, Nr. 10, 15.11.1997, S. 4977-4981.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Charge transport in strained Si1-yCy and Si1-x-yGexCy alloys on Si(001)
AU - Osten, H. J.
AU - Gaworzewski, P.
PY - 1997/11/15
Y1 - 1997/11/15
N2 - We have investigated the temperature dependencies of charge carrier densities and Hall mobilities in tensile strained Si1-yCy and in compressively strained Si1-x-yGexCy layers. In both cases, the measured charge carrier densities at room temperature are not affected substantially by the addition of a small concentration of carbon (<1%) under identical growth conditions and dopant fluxes. The measured Hall mobilities monotonically decrease with increasing carbon content for electrons in Si1-yCy, and for holes in Si1-x-yGexCy, respectively. Our results indicate that electrically active defects are formed with the addition of carbon. These defects are presumably connected with carbon/Si interstitials or other C-related complexes. It seems to be difficult to attribute the formation of those electrically active defects solely to contaminations originating from the used carbon evaporation source. We observed that donor- and acceptor-like defects are formed in Si1-yCy as well as in Si1-x-yGexCy layers with roughly a constant ratio, independent of source temperature.
AB - We have investigated the temperature dependencies of charge carrier densities and Hall mobilities in tensile strained Si1-yCy and in compressively strained Si1-x-yGexCy layers. In both cases, the measured charge carrier densities at room temperature are not affected substantially by the addition of a small concentration of carbon (<1%) under identical growth conditions and dopant fluxes. The measured Hall mobilities monotonically decrease with increasing carbon content for electrons in Si1-yCy, and for holes in Si1-x-yGexCy, respectively. Our results indicate that electrically active defects are formed with the addition of carbon. These defects are presumably connected with carbon/Si interstitials or other C-related complexes. It seems to be difficult to attribute the formation of those electrically active defects solely to contaminations originating from the used carbon evaporation source. We observed that donor- and acceptor-like defects are formed in Si1-yCy as well as in Si1-x-yGexCy layers with roughly a constant ratio, independent of source temperature.
UR - http://www.scopus.com/inward/record.url?scp=0001512309&partnerID=8YFLogxK
U2 - 10.1063/1.366364
DO - 10.1063/1.366364
M3 - Article
AN - SCOPUS:0001512309
VL - 82
SP - 4977
EP - 4981
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
IS - 10
ER -