Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 235305 |
| Fachzeitschrift | Physical Review B |
| Jahrgang | 96 |
| Ausgabenummer | 23 |
| Publikationsstatus | Veröffentlicht - 15 Dez. 2017 |
Abstract
Semiconductor quantum dots are potential building blocks for scalable qubit architectures. Efficient control over the exchange interaction and the possibility of coherently manipulating electron states are essential ingredients towards this goal. We studied experimentally the shuttling of electrons trapped in serial quantum dot arrays isolated from the reservoirs. The isolation hereby enables a high degree of control over the tunnel couplings between the quantum dots, while electrons can be transferred through the array by gate voltage variations. Model calculations are compared with our experimental results for double, triple, and quadruple quantum dot arrays. We are able to identify all transitions observed in our experiments, including cotunneling transitions between distant quantum dots. The shuttling of individual electrons between quantum dots along chosen paths is demonstrated.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physical Review B, Jahrgang 96, Nr. 23, 235305, 15.12.2017.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Charge reconfiguration in arrays of quantum dots
AU - Bayer, Johannes C.
AU - Wagner, Timo
AU - Rugeramigabo, Eddy P.
AU - Haug, Rolf J.
N1 - Publisher Copyright: © 2017 American Physical Society. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.
PY - 2017/12/15
Y1 - 2017/12/15
N2 - Semiconductor quantum dots are potential building blocks for scalable qubit architectures. Efficient control over the exchange interaction and the possibility of coherently manipulating electron states are essential ingredients towards this goal. We studied experimentally the shuttling of electrons trapped in serial quantum dot arrays isolated from the reservoirs. The isolation hereby enables a high degree of control over the tunnel couplings between the quantum dots, while electrons can be transferred through the array by gate voltage variations. Model calculations are compared with our experimental results for double, triple, and quadruple quantum dot arrays. We are able to identify all transitions observed in our experiments, including cotunneling transitions between distant quantum dots. The shuttling of individual electrons between quantum dots along chosen paths is demonstrated.
AB - Semiconductor quantum dots are potential building blocks for scalable qubit architectures. Efficient control over the exchange interaction and the possibility of coherently manipulating electron states are essential ingredients towards this goal. We studied experimentally the shuttling of electrons trapped in serial quantum dot arrays isolated from the reservoirs. The isolation hereby enables a high degree of control over the tunnel couplings between the quantum dots, while electrons can be transferred through the array by gate voltage variations. Model calculations are compared with our experimental results for double, triple, and quadruple quantum dot arrays. We are able to identify all transitions observed in our experiments, including cotunneling transitions between distant quantum dots. The shuttling of individual electrons between quantum dots along chosen paths is demonstrated.
UR - http://www.scopus.com/inward/record.url?scp=85039416671&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.96.235305
DO - 10.1103/PhysRevB.96.235305
M3 - Article
AN - SCOPUS:85039416671
VL - 96
JO - Physical Review B
JF - Physical Review B
SN - 2469-9950
IS - 23
M1 - 235305
ER -