Characterization of valence band offsets in P-Si/SiGe/Si by space charge spectroscopy

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Autoren

  • K. Schmalz
  • H. Rucker
  • I. N. Yassievich
  • H. G. Grimmeiss
  • W. Mehr
  • H. Rankenfeld
  • H. J. Osten
  • P. Schley
  • I. Bababskaya

Externe Organisationen

  • Leibniz-Institut für innovative Mikroelektronik (IHP)
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Details

OriginalspracheEnglisch
Titel des SammelwerksGrowth, Processing, and Characterization of Semiconductor Heterostructures
Seiten389-394
Seitenumfang6
PublikationsstatusVeröffentlicht - 1994
Extern publiziertJa
Veranstaltung1993 Fall Meeting of the Materials Research Society - Boston, USA / Vereinigte Staaten
Dauer: 29 Nov. 1993 → 2 Dez. 1993

Publikationsreihe

NameMaterials Research Society Symposium Proceedings
Band326
ISSN (Print)0272-9172

Abstract

The aim of the present work is to present a study of carrier capture and emission processes in p-type Si/Si1-xGexSi QW structures. A n+ p-diode with buried Si1-xGex layer was used which allowed DLTS- and admittance spectroscopy on the same QW.

ASJC Scopus Sachgebiete

Zitieren

Characterization of valence band offsets in P-Si/SiGe/Si by space charge spectroscopy. / Schmalz, K.; Rucker, H.; Yassievich, I. N. et al.
Growth, Processing, and Characterization of Semiconductor Heterostructures. 1994. S. 389-394 (Materials Research Society Symposium Proceedings; Band 326).

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Schmalz, K, Rucker, H, Yassievich, IN, Grimmeiss, HG, Mehr, W, Rankenfeld, H, Osten, HJ, Schley, P & Bababskaya, I 1994, Characterization of valence band offsets in P-Si/SiGe/Si by space charge spectroscopy. in Growth, Processing, and Characterization of Semiconductor Heterostructures. Materials Research Society Symposium Proceedings, Bd. 326, S. 389-394, 1993 Fall Meeting of the Materials Research Society, Boston, Massachusetts, USA / Vereinigte Staaten, 29 Nov. 1993.
Schmalz, K., Rucker, H., Yassievich, I. N., Grimmeiss, H. G., Mehr, W., Rankenfeld, H., Osten, H. J., Schley, P., & Bababskaya, I. (1994). Characterization of valence band offsets in P-Si/SiGe/Si by space charge spectroscopy. In Growth, Processing, and Characterization of Semiconductor Heterostructures (S. 389-394). (Materials Research Society Symposium Proceedings; Band 326).
Schmalz K, Rucker H, Yassievich IN, Grimmeiss HG, Mehr W, Rankenfeld H et al. Characterization of valence band offsets in P-Si/SiGe/Si by space charge spectroscopy. in Growth, Processing, and Characterization of Semiconductor Heterostructures. 1994. S. 389-394. (Materials Research Society Symposium Proceedings).
Schmalz, K. ; Rucker, H. ; Yassievich, I. N. et al. / Characterization of valence band offsets in P-Si/SiGe/Si by space charge spectroscopy. Growth, Processing, and Characterization of Semiconductor Heterostructures. 1994. S. 389-394 (Materials Research Society Symposium Proceedings).
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AU - Grimmeiss, H. G.

AU - Mehr, W.

AU - Rankenfeld, H.

AU - Osten, H. J.

AU - Schley, P.

AU - Bababskaya, I.

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