Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 772-777 |
| Seitenumfang | 6 |
| Fachzeitschrift | Applied Surface Science |
| Jahrgang | 421 |
| Ausgabenummer | B |
| Frühes Online-Datum | 21 Aug. 2016 |
| Publikationsstatus | Veröffentlicht - 1 Nov. 2017 |
Abstract
We report on the investigation of thin, epitaxially grown Si 1-x Ge x layers on Si(001) substrates by spectroscopic ellipsometry over the entire composition range. Si 1-x Ge x layers with Ge fractions between 17 and 100% at a fixed layer thickness of ∼100 nm were grown on 100 mm Si(001) p-type wafers using surfactant-mediated molecular beam epitaxy with Sb as a surfactant. The degree of strain relaxation increases with Ge fraction, it varies from fully strained layers for low Ge fractions to almost complete relaxation for high Ge fractions. A parameterization is being presented with which the Ge content and layer thickness of thin SiGe layers on Si(001) substrates can be determined. We find a good correlation between the obtained results from the ellipsometry measurements and X-ray diffraction and X-ray reflectometry results, which are used as a reference for sample characterization. We observe that the E 1 interband transition in the band structure of SiGe layers changes almost linearly with the Ge fraction for our samples. We use a modified Lorentz oscillator model to fit the measured curves, using six oscillators for high Ge fractions (x > 0.59) and four oscillators for low Ge fractions (x < 0.59).
ASJC Scopus Sachgebiete
- Chemie (insg.)
- Allgemeine Chemie
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
- Physik und Astronomie (insg.)
- Oberflächen und Grenzflächen
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
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in: Applied Surface Science, Jahrgang 421, Nr. B, 01.11.2017, S. 772-777.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Characterization of thin SiGe layers on Si (001) by spectroscopic ellipsometry for Ge fractions from 0 to 100%
AU - Schmidt, Jan
AU - Eilert, Marius
AU - Peters, Sven
AU - Wietler, Tobias F.
N1 - Publisher Copyright: © 2016 Elsevier B.V. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.
PY - 2017/11/1
Y1 - 2017/11/1
N2 - We report on the investigation of thin, epitaxially grown Si 1-x Ge x layers on Si(001) substrates by spectroscopic ellipsometry over the entire composition range. Si 1-x Ge x layers with Ge fractions between 17 and 100% at a fixed layer thickness of ∼100 nm were grown on 100 mm Si(001) p-type wafers using surfactant-mediated molecular beam epitaxy with Sb as a surfactant. The degree of strain relaxation increases with Ge fraction, it varies from fully strained layers for low Ge fractions to almost complete relaxation for high Ge fractions. A parameterization is being presented with which the Ge content and layer thickness of thin SiGe layers on Si(001) substrates can be determined. We find a good correlation between the obtained results from the ellipsometry measurements and X-ray diffraction and X-ray reflectometry results, which are used as a reference for sample characterization. We observe that the E 1 interband transition in the band structure of SiGe layers changes almost linearly with the Ge fraction for our samples. We use a modified Lorentz oscillator model to fit the measured curves, using six oscillators for high Ge fractions (x > 0.59) and four oscillators for low Ge fractions (x < 0.59).
AB - We report on the investigation of thin, epitaxially grown Si 1-x Ge x layers on Si(001) substrates by spectroscopic ellipsometry over the entire composition range. Si 1-x Ge x layers with Ge fractions between 17 and 100% at a fixed layer thickness of ∼100 nm were grown on 100 mm Si(001) p-type wafers using surfactant-mediated molecular beam epitaxy with Sb as a surfactant. The degree of strain relaxation increases with Ge fraction, it varies from fully strained layers for low Ge fractions to almost complete relaxation for high Ge fractions. A parameterization is being presented with which the Ge content and layer thickness of thin SiGe layers on Si(001) substrates can be determined. We find a good correlation between the obtained results from the ellipsometry measurements and X-ray diffraction and X-ray reflectometry results, which are used as a reference for sample characterization. We observe that the E 1 interband transition in the band structure of SiGe layers changes almost linearly with the Ge fraction for our samples. We use a modified Lorentz oscillator model to fit the measured curves, using six oscillators for high Ge fractions (x > 0.59) and four oscillators for low Ge fractions (x < 0.59).
KW - Silicon germanium
KW - Spectroscopic ellipsometry
KW - Surfactant-mediated epitaxy
KW - Thin film analysis
UR - http://www.scopus.com/inward/record.url?scp=84994246420&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2016.08.091
DO - 10.1016/j.apsusc.2016.08.091
M3 - Article
AN - SCOPUS:84994246420
VL - 421
SP - 772
EP - 777
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - B
ER -