Characterization of the valence band offset in p-Si/Si1-xGex/Si by space charge spectroscopy

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autorschaft

  • K. Schmalz
  • H. Rücker
  • I. N. Yassievich
  • H. G. Grimmeiss
  • B. Dietrich
  • H. Frankenfeld
  • W. Mehr
  • H. J. Osten
  • P. Schley

Externe Organisationen

  • Leibniz-Institut für innovative Mikroelektronik (IHP)
  • RAS - Ioffe Physico Technical Institute
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)945-948
Seitenumfang4
FachzeitschriftSolid state electronics
Jahrgang37
Ausgabenummer4-6
PublikationsstatusVeröffentlicht - Apr. 1994
Extern publiziertJa

Abstract

Results are presented concerning direct comparison of admittance spectroscopy and DLTS on p-Si/Si1-xGex/Si quantum well (QW) structures with x = 0.17 using n+p mesa diodes with buried QW layer. The temperature dependence of potential barriers at the QW and of the Fermi level determine the activation energy Ea of the conductance across the QW. From Ea a band offset of ΔEv = 0.16 eV was estimated. DLTS data suggest that hole emission from QW was observed with activation energy in correspondence with ΔEv.

ASJC Scopus Sachgebiete

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Characterization of the valence band offset in p-Si/Si1-xGex/Si by space charge spectroscopy. / Schmalz, K.; Rücker, H.; Yassievich, I. N. et al.
in: Solid state electronics, Jahrgang 37, Nr. 4-6, 04.1994, S. 945-948.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Schmalz, K, Rücker, H, Yassievich, IN, Grimmeiss, HG, Dietrich, B, Frankenfeld, H, Mehr, W, Osten, HJ & Schley, P 1994, 'Characterization of the valence band offset in p-Si/Si1-xGex/Si by space charge spectroscopy', Solid state electronics, Jg. 37, Nr. 4-6, S. 945-948. https://doi.org/10.1016/0038-1101(94)90332-8
Schmalz, K., Rücker, H., Yassievich, I. N., Grimmeiss, H. G., Dietrich, B., Frankenfeld, H., Mehr, W., Osten, H. J., & Schley, P. (1994). Characterization of the valence band offset in p-Si/Si1-xGex/Si by space charge spectroscopy. Solid state electronics, 37(4-6), 945-948. https://doi.org/10.1016/0038-1101(94)90332-8
Schmalz K, Rücker H, Yassievich IN, Grimmeiss HG, Dietrich B, Frankenfeld H et al. Characterization of the valence band offset in p-Si/Si1-xGex/Si by space charge spectroscopy. Solid state electronics. 1994 Apr;37(4-6):945-948. doi: 10.1016/0038-1101(94)90332-8
Schmalz, K. ; Rücker, H. ; Yassievich, I. N. et al. / Characterization of the valence band offset in p-Si/Si1-xGex/Si by space charge spectroscopy. in: Solid state electronics. 1994 ; Jahrgang 37, Nr. 4-6. S. 945-948.
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abstract = "Results are presented concerning direct comparison of admittance spectroscopy and DLTS on p-Si/Si1-xGex/Si quantum well (QW) structures with x = 0.17 using n+p mesa diodes with buried QW layer. The temperature dependence of potential barriers at the QW and of the Fermi level determine the activation energy Ea of the conductance across the QW. From Ea a band offset of ΔEv = 0.16 eV was estimated. DLTS data suggest that hole emission from QW was observed with activation energy in correspondence with ΔEv.",
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Download

TY - JOUR

T1 - Characterization of the valence band offset in p-Si/Si1-xGex/Si by space charge spectroscopy

AU - Schmalz, K.

AU - Rücker, H.

AU - Yassievich, I. N.

AU - Grimmeiss, H. G.

AU - Dietrich, B.

AU - Frankenfeld, H.

AU - Mehr, W.

AU - Osten, H. J.

AU - Schley, P.

PY - 1994/4

Y1 - 1994/4

N2 - Results are presented concerning direct comparison of admittance spectroscopy and DLTS on p-Si/Si1-xGex/Si quantum well (QW) structures with x = 0.17 using n+p mesa diodes with buried QW layer. The temperature dependence of potential barriers at the QW and of the Fermi level determine the activation energy Ea of the conductance across the QW. From Ea a band offset of ΔEv = 0.16 eV was estimated. DLTS data suggest that hole emission from QW was observed with activation energy in correspondence with ΔEv.

AB - Results are presented concerning direct comparison of admittance spectroscopy and DLTS on p-Si/Si1-xGex/Si quantum well (QW) structures with x = 0.17 using n+p mesa diodes with buried QW layer. The temperature dependence of potential barriers at the QW and of the Fermi level determine the activation energy Ea of the conductance across the QW. From Ea a band offset of ΔEv = 0.16 eV was estimated. DLTS data suggest that hole emission from QW was observed with activation energy in correspondence with ΔEv.

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U2 - 10.1016/0038-1101(94)90332-8

DO - 10.1016/0038-1101(94)90332-8

M3 - Article

AN - SCOPUS:0028408397

VL - 37

SP - 945

EP - 948

JO - Solid state electronics

JF - Solid state electronics

SN - 0038-1101

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