Characterization of the Effectiveness of Carbon Incorporation in SiGe for the Elimination of Parasitic Energy Barriers in SiGe HBT's

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • I. M. Anteney
  • G. Lippert
  • P. Ashburn
  • H. J. Osten
  • B. Heinemann
  • G. J. Parker
  • D. Knoll

Externe Organisationen

  • University of Southampton
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Details

OriginalspracheEnglisch
Seiten (von - bis)116-118
Seitenumfang3
FachzeitschriftIEEE electron device letters
Jahrgang20
Ausgabenummer3
PublikationsstatusVeröffentlicht - März 1999
Extern publiziertJa

Abstract

An electrical method is applied to SiGe and SiGe:C heterojunction bipolar transistors (HBT's) to extract the bandgap narrowing in the base layer and to characterize the presence of parasitic energy barriers in the conduction band, arising from boron transient enhanced out-diffusion from the SiGe layer. It is shown that a background carbon concentration within the base (≈1020 cm-3) eliminates parasitic energy barriers at the collector/base junction, and hence shows that transient enhanced diffusion of boron from the base has been completely suppressed.

ASJC Scopus Sachgebiete

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Characterization of the Effectiveness of Carbon Incorporation in SiGe for the Elimination of Parasitic Energy Barriers in SiGe HBT's. / Anteney, I. M.; Lippert, G.; Ashburn, P. et al.
in: IEEE electron device letters, Jahrgang 20, Nr. 3, 03.1999, S. 116-118.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Anteney IM, Lippert G, Ashburn P, Osten HJ, Heinemann B, Parker GJ et al. Characterization of the Effectiveness of Carbon Incorporation in SiGe for the Elimination of Parasitic Energy Barriers in SiGe HBT's. IEEE electron device letters. 1999 Mär;20(3):116-118. doi: 10.1109/55.748906
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Download

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AU - Lippert, G.

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AU - Osten, H. J.

AU - Heinemann, B.

AU - Parker, G. J.

AU - Knoll, D.

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AB - An electrical method is applied to SiGe and SiGe:C heterojunction bipolar transistors (HBT's) to extract the bandgap narrowing in the base layer and to characterize the presence of parasitic energy barriers in the conduction band, arising from boron transient enhanced out-diffusion from the SiGe layer. It is shown that a background carbon concentration within the base (≈1020 cm-3) eliminates parasitic energy barriers at the collector/base junction, and hence shows that transient enhanced diffusion of boron from the base has been completely suppressed.

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