Characterization of surfactant introduction into germanium-rich Si1-x Gex molecular beam epitaxy layer growth on silicon by means of secondary-ion mass spectrometry and Auger electron spectroscopy

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • D. Krüeger
  • R. Kurps
  • H. J. Osten
  • G. Lippert
  • D. Roeser

Externe Organisationen

  • Leibniz-Institut für innovative Mikroelektronik (IHP)
  • Mikroelektronik Technologiegesellschaft mbH (MTG mbH)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)61-64
Seitenumfang4
FachzeitschriftTHIN SOLID FILMS
Jahrgang221
Ausgabenummer1-2
PublikationsstatusVeröffentlicht - 10 Dez. 1992
Extern publiziertJa

Abstract

The behaviour of antimony deposited in different ways as surfactant in 30 nm germanium-rich Si1-x Gex molecular beam epitaxy films on Si(100) has been analysed by means of secondary-ion mass spectrometry (SIMS) and Auger electron spectroscopy. It was shown that antimony partially remains at the deposition place, a minor amount is incorporated into the growing film and a significant part segregates at the surface. By means of low energy SIMS (1-3 keV Cs+ beams) at elevated angles of incidence, surfactant introduction has been analysed with subnanometre depth resolution. The full width at half-maximum of the SIMS antimony profile corresponds to the estimated diffusion broadening in the case of sequential deposition and shows significant profile smearing in the case of coevaporation.

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Characterization of surfactant introduction into germanium-rich Si1-x Gex molecular beam epitaxy layer growth on silicon by means of secondary-ion mass spectrometry and Auger electron spectroscopy. / Krüeger, D.; Kurps, R.; Osten, H. J. et al.
in: THIN SOLID FILMS, Jahrgang 221, Nr. 1-2, 10.12.1992, S. 61-64.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

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abstract = "The behaviour of antimony deposited in different ways as surfactant in 30 nm germanium-rich Si1-x Gex molecular beam epitaxy films on Si(100) has been analysed by means of secondary-ion mass spectrometry (SIMS) and Auger electron spectroscopy. It was shown that antimony partially remains at the deposition place, a minor amount is incorporated into the growing film and a significant part segregates at the surface. By means of low energy SIMS (1-3 keV Cs+ beams) at elevated angles of incidence, surfactant introduction has been analysed with subnanometre depth resolution. The full width at half-maximum of the SIMS antimony profile corresponds to the estimated diffusion broadening in the case of sequential deposition and shows significant profile smearing in the case of coevaporation.",
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Download

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T1 - Characterization of surfactant introduction into germanium-rich Si1-x Gex molecular beam epitaxy layer growth on silicon by means of secondary-ion mass spectrometry and Auger electron spectroscopy

AU - Krüeger, D.

AU - Kurps, R.

AU - Osten, H. J.

AU - Lippert, G.

AU - Roeser, D.

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