Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 14287-14301 |
| Seitenumfang | 15 |
| Fachzeitschrift | Physical Review B |
| Jahrgang | 50 |
| Ausgabenummer | 19 |
| Publikationsstatus | Veröffentlicht - 1994 |
| Extern publiziert | Ja |
Abstract
Results are presented concerning the electrical characterization of p-Si/Si1-xGex/Si quantum well (QW) structures by admittance spectroscopy, capacitance measurements, and deep-level transient spectroscopy (DLTS). The capture and emission processes of holes in QW structures are theoretically analyzed for equilibrium and nonequilibrium conditions taking into account external electric fields as well as local electric fields induced by confined charge carriers. The temperature dependence of potential barriers at the QW and of the Fermi level determines the activation energy Ea of the conductance across the QW. Admittance spectroscopy data of QW's with x=0.25 and thicknesses in the range from 1 to 5 nm are in fair agreement with the proposed theoretical model. Hole emission from the QW region was studied by DLTS investigations on n+p mesa diodes for QW's with x=0.17.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
in: Physical Review B, Jahrgang 50, Nr. 19, 1994, S. 14287-14301.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Characterization of Si/Si1-xGex/Si quantum wells by space-charge spectroscopy
AU - Schmalz, K.
AU - Yassievich, I. N.
AU - Rücker, H.
AU - Grimmeiss, H. G.
AU - Frankenfeld, H.
AU - Mehr, W.
AU - Osten, H. J.
AU - Schley, P.
AU - Zeindl, H. P.
PY - 1994
Y1 - 1994
N2 - Results are presented concerning the electrical characterization of p-Si/Si1-xGex/Si quantum well (QW) structures by admittance spectroscopy, capacitance measurements, and deep-level transient spectroscopy (DLTS). The capture and emission processes of holes in QW structures are theoretically analyzed for equilibrium and nonequilibrium conditions taking into account external electric fields as well as local electric fields induced by confined charge carriers. The temperature dependence of potential barriers at the QW and of the Fermi level determines the activation energy Ea of the conductance across the QW. Admittance spectroscopy data of QW's with x=0.25 and thicknesses in the range from 1 to 5 nm are in fair agreement with the proposed theoretical model. Hole emission from the QW region was studied by DLTS investigations on n+p mesa diodes for QW's with x=0.17.
AB - Results are presented concerning the electrical characterization of p-Si/Si1-xGex/Si quantum well (QW) structures by admittance spectroscopy, capacitance measurements, and deep-level transient spectroscopy (DLTS). The capture and emission processes of holes in QW structures are theoretically analyzed for equilibrium and nonequilibrium conditions taking into account external electric fields as well as local electric fields induced by confined charge carriers. The temperature dependence of potential barriers at the QW and of the Fermi level determines the activation energy Ea of the conductance across the QW. Admittance spectroscopy data of QW's with x=0.25 and thicknesses in the range from 1 to 5 nm are in fair agreement with the proposed theoretical model. Hole emission from the QW region was studied by DLTS investigations on n+p mesa diodes for QW's with x=0.17.
UR - http://www.scopus.com/inward/record.url?scp=0009379671&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.50.14287
DO - 10.1103/PhysRevB.50.14287
M3 - Article
AN - SCOPUS:0009379671
VL - 50
SP - 14287
EP - 14301
JO - Physical Review B
JF - Physical Review B
SN - 0163-1829
IS - 19
ER -