Characterization of MBE grown Si/Si1-x(Gex/Si structures using n+ p-diodes

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Autoren

  • K. Schmalz
  • H. Rücker
  • H. G. Grimmeiss
  • B. Dietrich
  • H. Frankenfeld
  • W. Mehr
  • H. J. Osten
  • P. Schley

Externe Organisationen

  • Leibniz-Institut für innovative Mikroelektronik (IHP)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Titel des SammelwerksGettering and Defect Engineering in Semiconductor Technology, GADEST 93
Herausgeber/-innenH.G. Grimmeiss, M. Kittler, H. Richter
Seiten595-600
Seitenumfang6
PublikationsstatusVeröffentlicht - Dez. 1993
Extern publiziertJa
Veranstaltung5th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST 1993 - Chossewitz, Frankfurt (Oder), Deutschland
Dauer: 9 Okt. 1993 → 14 Okt. 1993

Publikationsreihe

NameSolid State Phenomena
Band32-33
ISSN (Print)1012-0394
ISSN (elektronisch)1662-9779

Abstract

Capture and emission proceses of holes in quantum well (QW) structures are investigated using admittance spectroscopy and DLTS. A direct comparison of both methods is given for p- Si/S1-XGex/Si n+p mesa diodes with x = 0.17. The experimental results are analysed taking into account the external electric field as well as internal electric fields induced by holes confined in the QW. The temperature dependence of potential barriers at the QW and of the Fermi level determine the activation energy Ea of the conductance across the QW. From Ea band offset of ΔEV = 0.16 eV was estimated. DLTS data suggest that hole emission from QW was observed with activation energy in correspondence with ΔEV.

ASJC Scopus Sachgebiete

Zitieren

Characterization of MBE grown Si/Si1-x(Gex/Si structures using n+ p-diodes. / Schmalz, K.; Rücker, H.; Grimmeiss, H. G. et al.
Gettering and Defect Engineering in Semiconductor Technology, GADEST 93. Hrsg. / H.G. Grimmeiss; M. Kittler; H. Richter. 1993. S. 595-600 (Solid State Phenomena; Band 32-33).

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Schmalz, K, Rücker, H, Grimmeiss, HG, Dietrich, B, Frankenfeld, H, Mehr, W, Osten, HJ & Schley, P 1993, Characterization of MBE grown Si/Si1-x(Gex/Si structures using n+ p-diodes. in HG Grimmeiss, M Kittler & H Richter (Hrsg.), Gettering and Defect Engineering in Semiconductor Technology, GADEST 93. Solid State Phenomena, Bd. 32-33, S. 595-600, 5th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST 1993, Chossewitz, Frankfurt (Oder), Deutschland, 9 Okt. 1993. https://doi.org/10.4028/www.scientific.net/SSP.32-33.595
Schmalz, K., Rücker, H., Grimmeiss, H. G., Dietrich, B., Frankenfeld, H., Mehr, W., Osten, H. J., & Schley, P. (1993). Characterization of MBE grown Si/Si1-x(Gex/Si structures using n+ p-diodes. In H. G. Grimmeiss, M. Kittler, & H. Richter (Hrsg.), Gettering and Defect Engineering in Semiconductor Technology, GADEST 93 (S. 595-600). (Solid State Phenomena; Band 32-33). https://doi.org/10.4028/www.scientific.net/SSP.32-33.595
Schmalz K, Rücker H, Grimmeiss HG, Dietrich B, Frankenfeld H, Mehr W et al. Characterization of MBE grown Si/Si1-x(Gex/Si structures using n+ p-diodes. in Grimmeiss HG, Kittler M, Richter H, Hrsg., Gettering and Defect Engineering in Semiconductor Technology, GADEST 93. 1993. S. 595-600. (Solid State Phenomena). doi: 10.4028/www.scientific.net/SSP.32-33.595
Schmalz, K. ; Rücker, H. ; Grimmeiss, H. G. et al. / Characterization of MBE grown Si/Si1-x(Gex/Si structures using n+ p-diodes. Gettering and Defect Engineering in Semiconductor Technology, GADEST 93. Hrsg. / H.G. Grimmeiss ; M. Kittler ; H. Richter. 1993. S. 595-600 (Solid State Phenomena).
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abstract = "Capture and emission proceses of holes in quantum well (QW) structures are investigated using admittance spectroscopy and DLTS. A direct comparison of both methods is given for p- Si/S1-XGex/Si n+p mesa diodes with x = 0.17. The experimental results are analysed taking into account the external electric field as well as internal electric fields induced by holes confined in the QW. The temperature dependence of potential barriers at the QW and of the Fermi level determine the activation energy Ea of the conductance across the QW. From Ea band offset of ΔEV = 0.16 eV was estimated. DLTS data suggest that hole emission from QW was observed with activation energy in correspondence with ΔEV.",
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AU - Schmalz, K.

AU - Rücker, H.

AU - Grimmeiss, H. G.

AU - Dietrich, B.

AU - Frankenfeld, H.

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