Characterization of deformed quantum dots by modeling single-electron- tunneling experiments

Publikation: Beitrag in FachzeitschriftKonferenzaufsatz in FachzeitschriftForschungPeer-Review

Autoren

  • E. Räsänen
  • J. Könemann
  • R. J. Haug
  • M. J. Puska
  • R. M. Nieminen

Organisationseinheiten

Externe Organisationen

  • Aalto University
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)477-481
Seitenumfang5
FachzeitschriftPhysica E: Low-Dimensional Systems and Nanostructures
Jahrgang26
Ausgabenummer1-4
PublikationsstatusVeröffentlicht - 25 Nov. 2004
VeranstaltungInternational Conference on Quantum Dots - Banff, Alberta, Kanada
Dauer: 10 Mai 200413 Mai 2004

Abstract

We have analyzed a single-electron transport spectrum of a quantum dot formed in a GaAs/AlGaAs resonant tunneling device. The measured spectrum indicates a strong confining potential and the lack of circular symmetry. We model the quantum dot by applying a rounded parabolic potential and a negatively charged impurity, shifted laterally and vertically from the center of the dot. We analyze the physical conditions behind the optimized parameter values and consider also the structural properties of the corresponding single-electron states as a function of the magnetic field.

ASJC Scopus Sachgebiete

Zitieren

Characterization of deformed quantum dots by modeling single-electron- tunneling experiments. / Räsänen, E.; Könemann, J.; Haug, R. J. et al.
in: Physica E: Low-Dimensional Systems and Nanostructures, Jahrgang 26, Nr. 1-4, 25.11.2004, S. 477-481.

Publikation: Beitrag in FachzeitschriftKonferenzaufsatz in FachzeitschriftForschungPeer-Review

Räsänen E, Könemann J, Haug RJ, Puska MJ, Nieminen RM. Characterization of deformed quantum dots by modeling single-electron- tunneling experiments. Physica E: Low-Dimensional Systems and Nanostructures. 2004 Nov 25;26(1-4):477-481. doi: 10.1016/j.physe.2004.08.086
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TY - JOUR

T1 - Characterization of deformed quantum dots by modeling single-electron- tunneling experiments

AU - Räsänen, E.

AU - Könemann, J.

AU - Haug, R. J.

AU - Puska, M. J.

AU - Nieminen, R. M.

PY - 2004/11/25

Y1 - 2004/11/25

N2 - We have analyzed a single-electron transport spectrum of a quantum dot formed in a GaAs/AlGaAs resonant tunneling device. The measured spectrum indicates a strong confining potential and the lack of circular symmetry. We model the quantum dot by applying a rounded parabolic potential and a negatively charged impurity, shifted laterally and vertically from the center of the dot. We analyze the physical conditions behind the optimized parameter values and consider also the structural properties of the corresponding single-electron states as a function of the magnetic field.

AB - We have analyzed a single-electron transport spectrum of a quantum dot formed in a GaAs/AlGaAs resonant tunneling device. The measured spectrum indicates a strong confining potential and the lack of circular symmetry. We model the quantum dot by applying a rounded parabolic potential and a negatively charged impurity, shifted laterally and vertically from the center of the dot. We analyze the physical conditions behind the optimized parameter values and consider also the structural properties of the corresponding single-electron states as a function of the magnetic field.

KW - Electron transport

KW - Quantum dots

KW - Single-electron spectrum

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U2 - 10.1016/j.physe.2004.08.086

DO - 10.1016/j.physe.2004.08.086

M3 - Conference article

AN - SCOPUS:13444259626

VL - 26

SP - 477

EP - 481

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 1-4

T2 - International Conference on Quantum Dots

Y2 - 10 May 2004 through 13 May 2004

ER -

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