Characterization of crystalline rare-earth oxide high-K dielectrics grown by molecular beam epitaxy on silicon carbide

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • A. Fissel
  • M. Czernohorsky
  • H. J. Osten

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OriginalspracheEnglisch
Seiten (von - bis)2115-2118
Seitenumfang4
FachzeitschriftJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Jahrgang24
Ausgabenummer4
PublikationsstatusVeröffentlicht - 26 Juli 2006

Abstract

We have investigated the growth and electrical properties of crystalline Gd2O3 directly grown on 6H-SiC(0001) substrates by molecular beam epitaxy. Initially, Gd2O3 islands with hexagonal structure are formed. Further growth resulted in the formation of flat layers in a mixture of cubic bixbyite in [111] orientation and monoclinic structure. The fabricated capacitors exhibited suitable dielectric properties at room temperature; such as a dielectric constant of ε=22, a leakage current of 10-8 A/cm2 at. 1 V and breakdown fields >4.3 MV/cm for layers with 14 nm thickness. These properties make Gd2O 3 interesting for high-K application on SiC.

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Characterization of crystalline rare-earth oxide high-K dielectrics grown by molecular beam epitaxy on silicon carbide. / Fissel, A.; Czernohorsky, M.; Osten, H. J.
in: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Jahrgang 24, Nr. 4, 26.07.2006, S. 2115-2118.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

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@article{beab415a14e84dbaa1540f84a84a010c,
title = "Characterization of crystalline rare-earth oxide high-K dielectrics grown by molecular beam epitaxy on silicon carbide",
abstract = "We have investigated the growth and electrical properties of crystalline Gd2O3 directly grown on 6H-SiC(0001) substrates by molecular beam epitaxy. Initially, Gd2O3 islands with hexagonal structure are formed. Further growth resulted in the formation of flat layers in a mixture of cubic bixbyite in [111] orientation and monoclinic structure. The fabricated capacitors exhibited suitable dielectric properties at room temperature; such as a dielectric constant of ε=22, a leakage current of 10-8 A/cm2 at. 1 V and breakdown fields >4.3 MV/cm for layers with 14 nm thickness. These properties make Gd2O 3 interesting for high-K application on SiC.",
author = "A. Fissel and M. Czernohorsky and Osten, {H. J.}",
year = "2006",
month = jul,
day = "26",
doi = "10.1116/1.2214702",
language = "English",
volume = "24",
pages = "2115--2118",
journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "4",

}

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TY - JOUR

T1 - Characterization of crystalline rare-earth oxide high-K dielectrics grown by molecular beam epitaxy on silicon carbide

AU - Fissel, A.

AU - Czernohorsky, M.

AU - Osten, H. J.

PY - 2006/7/26

Y1 - 2006/7/26

N2 - We have investigated the growth and electrical properties of crystalline Gd2O3 directly grown on 6H-SiC(0001) substrates by molecular beam epitaxy. Initially, Gd2O3 islands with hexagonal structure are formed. Further growth resulted in the formation of flat layers in a mixture of cubic bixbyite in [111] orientation and monoclinic structure. The fabricated capacitors exhibited suitable dielectric properties at room temperature; such as a dielectric constant of ε=22, a leakage current of 10-8 A/cm2 at. 1 V and breakdown fields >4.3 MV/cm for layers with 14 nm thickness. These properties make Gd2O 3 interesting for high-K application on SiC.

AB - We have investigated the growth and electrical properties of crystalline Gd2O3 directly grown on 6H-SiC(0001) substrates by molecular beam epitaxy. Initially, Gd2O3 islands with hexagonal structure are formed. Further growth resulted in the formation of flat layers in a mixture of cubic bixbyite in [111] orientation and monoclinic structure. The fabricated capacitors exhibited suitable dielectric properties at room temperature; such as a dielectric constant of ε=22, a leakage current of 10-8 A/cm2 at. 1 V and breakdown fields >4.3 MV/cm for layers with 14 nm thickness. These properties make Gd2O 3 interesting for high-K application on SiC.

UR - http://www.scopus.com/inward/record.url?scp=33746531190&partnerID=8YFLogxK

U2 - 10.1116/1.2214702

DO - 10.1116/1.2214702

M3 - Article

AN - SCOPUS:33746531190

VL - 24

SP - 2115

EP - 2118

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

SN - 1071-1023

IS - 4

ER -