Characterization of asymmetric coupled CMOS lines

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • Uwe Arz
  • Dylan F. Williams
  • David K. Walker
  • Janet E. Rogers
  • Markus Rudack
  • Dieter Treytnar
  • Hartmut Grabinski

Organisationseinheiten

Externe Organisationen

  • National Institute of Standards and Technology (NIST)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)609-612
Seitenumfang4
FachzeitschriftIEEE MTT-S International Microwave Symposium Digest
Jahrgang2
PublikationsstatusVeröffentlicht - 2000

Abstract

This paper investigates the properties of asymmetric coupled lines built in a 0.25 μm CMOS technology in the frequency range of 50 MHz to 26.5 GHz. We show that the frequency-dependent line parameters extracted from calibrated four-port S-parameter measurements agree well with data predicted by numerical calculations. To our knowledge these are the first complete high-frequency measurements of the line parameters for asymmetric coupled lines on silicon ever reported.

ASJC Scopus Sachgebiete

Zitieren

Characterization of asymmetric coupled CMOS lines. / Arz, Uwe; Williams, Dylan F.; Walker, David K. et al.
in: IEEE MTT-S International Microwave Symposium Digest, Jahrgang 2, 2000, S. 609-612.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Arz, U, Williams, DF, Walker, DK, Rogers, JE, Rudack, M, Treytnar, D & Grabinski, H 2000, 'Characterization of asymmetric coupled CMOS lines', IEEE MTT-S International Microwave Symposium Digest, Jg. 2, S. 609-612. https://doi.org/10.1109/MWSYM.2000.863258
Arz, U., Williams, D. F., Walker, D. K., Rogers, J. E., Rudack, M., Treytnar, D., & Grabinski, H. (2000). Characterization of asymmetric coupled CMOS lines. IEEE MTT-S International Microwave Symposium Digest, 2, 609-612. https://doi.org/10.1109/MWSYM.2000.863258
Arz U, Williams DF, Walker DK, Rogers JE, Rudack M, Treytnar D et al. Characterization of asymmetric coupled CMOS lines. IEEE MTT-S International Microwave Symposium Digest. 2000;2:609-612. doi: 10.1109/MWSYM.2000.863258
Arz, Uwe ; Williams, Dylan F. ; Walker, David K. et al. / Characterization of asymmetric coupled CMOS lines. in: IEEE MTT-S International Microwave Symposium Digest. 2000 ; Jahrgang 2. S. 609-612.
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abstract = "This paper investigates the properties of asymmetric coupled lines built in a 0.25 μm CMOS technology in the frequency range of 50 MHz to 26.5 GHz. We show that the frequency-dependent line parameters extracted from calibrated four-port S-parameter measurements agree well with data predicted by numerical calculations. To our knowledge these are the first complete high-frequency measurements of the line parameters for asymmetric coupled lines on silicon ever reported.",
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