Characterization and Scalable Modeling of Power Semiconductors for Optimized Design of Traction Inverters with Si- and SiC-Devices

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Autoren

  • Arvid Merkert
  • Tobias Krone
  • Axel Mertens

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Details

OriginalspracheEnglisch
Titel des Sammelwerks2012 IEEE Vehicle Power and Propulsion Conference
UntertitelVPPC 2012
Seiten647-652
Seitenumfang6
PublikationsstatusVeröffentlicht - 5 Mai 2014
Veranstaltung2012 IEEE Vehicle Power and Propulsion Conference, VPPC 2012 - Seoul, Südkorea
Dauer: 9 Okt. 2012 → 12 Okt. 2012

Abstract

Silicon Carbide (SiC) based Power Semiconductors are expected to contribute to an increase in inverter efficiency, switching frequencies, maximum permissible junction temperature and system power density. This paper presents a comparison of Silicon (Si) and SiC device technologies for the use in hybrid electric vehicle (HEV) traction inverters. SiC-JFETs and SiC-MOSFETs are characterized and a scalable loss and scalable thermal modelling approach is used to find the optimum chip area for each Si or SiC traction inverter. This procedure also provides a proper technical comparison of the semiconductor technologies. The progressed simulations using standardized drive cycles and thermal-electrical coupled semiconductor models permit an inverter performance evaluation close to real load situtations, leading to an improved estimation of the benefit which can be expected from Systems utilizing SiC technology.

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Characterization and Scalable Modeling of Power Semiconductors for Optimized Design of Traction Inverters with Si- and SiC-Devices. / Merkert, Arvid; Krone, Tobias; Mertens, Axel.
2012 IEEE Vehicle Power and Propulsion Conference: VPPC 2012. 2014. S. 647-652 6422637.

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Merkert, A, Krone, T & Mertens, A 2014, Characterization and Scalable Modeling of Power Semiconductors for Optimized Design of Traction Inverters with Si- and SiC-Devices. in 2012 IEEE Vehicle Power and Propulsion Conference: VPPC 2012., 6422637, S. 647-652, 2012 IEEE Vehicle Power and Propulsion Conference, VPPC 2012, Seoul, Südkorea, 9 Okt. 2012. https://doi.org/10.1109/VPPC.2012.6422637
Merkert, A., Krone, T., & Mertens, A. (2014). Characterization and Scalable Modeling of Power Semiconductors for Optimized Design of Traction Inverters with Si- and SiC-Devices. In 2012 IEEE Vehicle Power and Propulsion Conference: VPPC 2012 (S. 647-652). Artikel 6422637 https://doi.org/10.1109/VPPC.2012.6422637
Merkert A, Krone T, Mertens A. Characterization and Scalable Modeling of Power Semiconductors for Optimized Design of Traction Inverters with Si- and SiC-Devices. in 2012 IEEE Vehicle Power and Propulsion Conference: VPPC 2012. 2014. S. 647-652. 6422637 doi: 10.1109/VPPC.2012.6422637
Merkert, Arvid ; Krone, Tobias ; Mertens, Axel. / Characterization and Scalable Modeling of Power Semiconductors for Optimized Design of Traction Inverters with Si- and SiC-Devices. 2012 IEEE Vehicle Power and Propulsion Conference: VPPC 2012. 2014. S. 647-652
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