Characterization and Operation of Graphene-Oxide-Semiconductor Emitters at Atmospheric Pressure Levels

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

Autoren

  • Florian Herdl
  • Maximillian J. Kueddelsmann
  • Andreas Schels
  • Michael Bachmann
  • Simon Edler
  • Dominik Wohlfartsstatter
  • Felix Dusberg
  • Alexander Prugger
  • Michael Dillig
  • Florian Dams
  • Rupert Schreiner
  • Cormac O. Coileain
  • Stefan Zimmermann
  • Andreas Pahlke
  • Georg S. Duesberg

Externe Organisationen

  • Universität der Bundeswehr München
  • KETEK GmbH
  • Ostbayerische Technische Hochschule Regensburg
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Titel des Sammelwerks2023 IEEE 36th International Vacuum Nanoelectronics Conference
UntertitelIVNC
Herausgeber (Verlag)Institute of Electrical and Electronics Engineers Inc.
Seiten14-16
Seitenumfang3
ISBN (elektronisch)9798350301434
ISBN (Print)979-8-3503-0144-1
PublikationsstatusVeröffentlicht - 2023
Veranstaltung36th IEEE International Vacuum Nanoelectronics Conference 2023 - Cambridge, USA / Vereinigte Staaten
Dauer: 10 Juli 202313 Juli 2023

Publikationsreihe

Name International Vacuum Nanoelectronics Conference
ISSN (Print)2164-2370
ISSN (elektronisch)2380-6311

Abstract

In recent years Graphene-Oxide-Semiconductor (GOS) electron emitters have attracted a lot of interest due to their outstanding durability in modest vacuum conditions. However, the performance at ambient pressure remains largely unexplored. In this study GOS-emitters are characterized in nitrogen and air at atmospheric pressure, and compared with their vacuum characteristics. For this purpose, lifetime and IV-characteristics measurements are shown. Furthermore, the GOS-emitter was operated as an ionization source for ion mobility spectrometry (IMS) at ambient conditions.

ASJC Scopus Sachgebiete

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Characterization and Operation of Graphene-Oxide-Semiconductor Emitters at Atmospheric Pressure Levels. / Herdl, Florian; Kueddelsmann, Maximillian J.; Schels, Andreas et al.
2023 IEEE 36th International Vacuum Nanoelectronics Conference: IVNC. Institute of Electrical and Electronics Engineers Inc., 2023. S. 14-16 ( International Vacuum Nanoelectronics Conference).

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

Herdl, F, Kueddelsmann, MJ, Schels, A, Bachmann, M, Edler, S, Wohlfartsstatter, D, Dusberg, F, Prugger, A, Dillig, M, Dams, F, Schreiner, R, Coileain, CO, Zimmermann, S, Pahlke, A & Duesberg, GS 2023, Characterization and Operation of Graphene-Oxide-Semiconductor Emitters at Atmospheric Pressure Levels. in 2023 IEEE 36th International Vacuum Nanoelectronics Conference: IVNC. International Vacuum Nanoelectronics Conference, Institute of Electrical and Electronics Engineers Inc., S. 14-16, 36th IEEE International Vacuum Nanoelectronics Conference 2023, Cambridge, USA / Vereinigte Staaten, 10 Juli 2023. https://doi.org/10.1109/IVNC57695.2023.10188974
Herdl, F., Kueddelsmann, M. J., Schels, A., Bachmann, M., Edler, S., Wohlfartsstatter, D., Dusberg, F., Prugger, A., Dillig, M., Dams, F., Schreiner, R., Coileain, C. O., Zimmermann, S., Pahlke, A., & Duesberg, G. S. (2023). Characterization and Operation of Graphene-Oxide-Semiconductor Emitters at Atmospheric Pressure Levels. In 2023 IEEE 36th International Vacuum Nanoelectronics Conference: IVNC (S. 14-16). ( International Vacuum Nanoelectronics Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IVNC57695.2023.10188974
Herdl F, Kueddelsmann MJ, Schels A, Bachmann M, Edler S, Wohlfartsstatter D et al. Characterization and Operation of Graphene-Oxide-Semiconductor Emitters at Atmospheric Pressure Levels. in 2023 IEEE 36th International Vacuum Nanoelectronics Conference: IVNC. Institute of Electrical and Electronics Engineers Inc. 2023. S. 14-16. ( International Vacuum Nanoelectronics Conference). doi: 10.1109/IVNC57695.2023.10188974
Herdl, Florian ; Kueddelsmann, Maximillian J. ; Schels, Andreas et al. / Characterization and Operation of Graphene-Oxide-Semiconductor Emitters at Atmospheric Pressure Levels. 2023 IEEE 36th International Vacuum Nanoelectronics Conference: IVNC. Institute of Electrical and Electronics Engineers Inc., 2023. S. 14-16 ( International Vacuum Nanoelectronics Conference).
Download
@inproceedings{7a79bd58ba7b45b5bf0a0c02bc8b0761,
title = "Characterization and Operation of Graphene-Oxide-Semiconductor Emitters at Atmospheric Pressure Levels",
abstract = "In recent years Graphene-Oxide-Semiconductor (GOS) electron emitters have attracted a lot of interest due to their outstanding durability in modest vacuum conditions. However, the performance at ambient pressure remains largely unexplored. In this study GOS-emitters are characterized in nitrogen and air at atmospheric pressure, and compared with their vacuum characteristics. For this purpose, lifetime and IV-characteristics measurements are shown. Furthermore, the GOS-emitter was operated as an ionization source for ion mobility spectrometry (IMS) at ambient conditions.",
keywords = "atmospheric pressure, carbon, chemical analytics, Electron emitter, graphene-oxide-semiconductor",
author = "Florian Herdl and Kueddelsmann, {Maximillian J.} and Andreas Schels and Michael Bachmann and Simon Edler and Dominik Wohlfartsstatter and Felix Dusberg and Alexander Prugger and Michael Dillig and Florian Dams and Rupert Schreiner and Coileain, {Cormac O.} and Stefan Zimmermann and Andreas Pahlke and Duesberg, {Georg S.}",
note = "Funding Information: This Project is supported by the Federal Ministry for Economic Affairs and Climate Action (BMWK) on the basis of a decision by the German Bundestag. (KK5037601BS0) ; 36th IEEE International Vacuum Nanoelectronics Conference 2023, IVNC 2023 ; Conference date: 10-07-2023 Through 13-07-2023",
year = "2023",
doi = "10.1109/IVNC57695.2023.10188974",
language = "English",
isbn = "979-8-3503-0144-1",
series = " International Vacuum Nanoelectronics Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "14--16",
booktitle = "2023 IEEE 36th International Vacuum Nanoelectronics Conference",
address = "United States",

}

Download

TY - GEN

T1 - Characterization and Operation of Graphene-Oxide-Semiconductor Emitters at Atmospheric Pressure Levels

AU - Herdl, Florian

AU - Kueddelsmann, Maximillian J.

AU - Schels, Andreas

AU - Bachmann, Michael

AU - Edler, Simon

AU - Wohlfartsstatter, Dominik

AU - Dusberg, Felix

AU - Prugger, Alexander

AU - Dillig, Michael

AU - Dams, Florian

AU - Schreiner, Rupert

AU - Coileain, Cormac O.

AU - Zimmermann, Stefan

AU - Pahlke, Andreas

AU - Duesberg, Georg S.

N1 - Funding Information: This Project is supported by the Federal Ministry for Economic Affairs and Climate Action (BMWK) on the basis of a decision by the German Bundestag. (KK5037601BS0)

PY - 2023

Y1 - 2023

N2 - In recent years Graphene-Oxide-Semiconductor (GOS) electron emitters have attracted a lot of interest due to their outstanding durability in modest vacuum conditions. However, the performance at ambient pressure remains largely unexplored. In this study GOS-emitters are characterized in nitrogen and air at atmospheric pressure, and compared with their vacuum characteristics. For this purpose, lifetime and IV-characteristics measurements are shown. Furthermore, the GOS-emitter was operated as an ionization source for ion mobility spectrometry (IMS) at ambient conditions.

AB - In recent years Graphene-Oxide-Semiconductor (GOS) electron emitters have attracted a lot of interest due to their outstanding durability in modest vacuum conditions. However, the performance at ambient pressure remains largely unexplored. In this study GOS-emitters are characterized in nitrogen and air at atmospheric pressure, and compared with their vacuum characteristics. For this purpose, lifetime and IV-characteristics measurements are shown. Furthermore, the GOS-emitter was operated as an ionization source for ion mobility spectrometry (IMS) at ambient conditions.

KW - atmospheric pressure

KW - carbon

KW - chemical analytics

KW - Electron emitter

KW - graphene-oxide-semiconductor

UR - http://www.scopus.com/inward/record.url?scp=85168680152&partnerID=8YFLogxK

U2 - 10.1109/IVNC57695.2023.10188974

DO - 10.1109/IVNC57695.2023.10188974

M3 - Conference contribution

AN - SCOPUS:85168680152

SN - 979-8-3503-0144-1

T3 - International Vacuum Nanoelectronics Conference

SP - 14

EP - 16

BT - 2023 IEEE 36th International Vacuum Nanoelectronics Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 36th IEEE International Vacuum Nanoelectronics Conference 2023

Y2 - 10 July 2023 through 13 July 2023

ER -

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