Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 299-301 |
| Seitenumfang | 3 |
| Fachzeitschrift | IEEE Microwave and Wireless Components Letters |
| Jahrgang | 11 |
| Ausgabenummer | 7 |
| Publikationsstatus | Veröffentlicht - Juli 2001 |
Abstract
The error caused by parasitic inductance in the characteristic impedance measured by the calibration-comparison method on lossy silicon substrates was examined. The examination showed that the error of the calibration-comparison method due to parasitic inductance was very small. It was indicated that the errors of the calibration-comparison method due to pad inductance and capacitance can be made small with careful designing.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: IEEE Microwave and Wireless Components Letters, Jahrgang 11, Nr. 7, 07.2001, S. 299-301.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Characteristic-impedance measurement error on lossy substrates
AU - Williams, Dylan F.
AU - Arz, Uwe
AU - Grabinski, Hartmut
PY - 2001/7
Y1 - 2001/7
N2 - The error caused by parasitic inductance in the characteristic impedance measured by the calibration-comparison method on lossy silicon substrates was examined. The examination showed that the error of the calibration-comparison method due to parasitic inductance was very small. It was indicated that the errors of the calibration-comparison method due to pad inductance and capacitance can be made small with careful designing.
AB - The error caused by parasitic inductance in the characteristic impedance measured by the calibration-comparison method on lossy silicon substrates was examined. The examination showed that the error of the calibration-comparison method due to parasitic inductance was very small. It was indicated that the errors of the calibration-comparison method due to pad inductance and capacitance can be made small with careful designing.
KW - Characteristic impedance
KW - Measurement
KW - Silicon
UR - http://www.scopus.com/inward/record.url?scp=0035401727&partnerID=8YFLogxK
U2 - 10.1109/7260.933777
DO - 10.1109/7260.933777
M3 - Article
AN - SCOPUS:0035401727
VL - 11
SP - 299
EP - 301
JO - IEEE Microwave and Wireless Components Letters
JF - IEEE Microwave and Wireless Components Letters
SN - 1531-1309
IS - 7
ER -