Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 3626-3633 |
| Seitenumfang | 8 |
| Fachzeitschrift | Journal of applied physics |
| Jahrgang | 85 |
| Ausgabenummer | 7 |
| Publikationsstatus | Veröffentlicht - 1 Apr. 1999 |
| Extern publiziert | Ja |
Abstract
Light-based microwave-detected photoconductance decay method (MW-PCD) measurements on plasma-enhanced chemical vapor deposited (PECVD) SiNx surface-passivated float-zone silicon wafers of different doping type and resistivities are used to determine the dependence of the effective surface recombination velocity Seff on the injection level Δn within the wafer. Capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurements are performed to determine the insulator charge density Qf, the interface state density Dit(E), and the capture cross sections σn(E) and σp(E). To avoid problems with leakage currents and hysteresis effects with Si-rich SiNx films, these investigations are performed on stoichiometric SiNx films.
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in: Journal of applied physics, Jahrgang 85, Nr. 7, 01.04.1999, S. 3626-3633.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Carrier recombination at silicon-silicon nitride interfaces fabricated by plasma-enhanced chemical vapor deposition
AU - Schmidt, Jan
AU - Aberle, Armin G.
PY - 1999/4/1
Y1 - 1999/4/1
N2 - Light-based microwave-detected photoconductance decay method (MW-PCD) measurements on plasma-enhanced chemical vapor deposited (PECVD) SiNx surface-passivated float-zone silicon wafers of different doping type and resistivities are used to determine the dependence of the effective surface recombination velocity Seff on the injection level Δn within the wafer. Capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurements are performed to determine the insulator charge density Qf, the interface state density Dit(E), and the capture cross sections σn(E) and σp(E). To avoid problems with leakage currents and hysteresis effects with Si-rich SiNx films, these investigations are performed on stoichiometric SiNx films.
AB - Light-based microwave-detected photoconductance decay method (MW-PCD) measurements on plasma-enhanced chemical vapor deposited (PECVD) SiNx surface-passivated float-zone silicon wafers of different doping type and resistivities are used to determine the dependence of the effective surface recombination velocity Seff on the injection level Δn within the wafer. Capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurements are performed to determine the insulator charge density Qf, the interface state density Dit(E), and the capture cross sections σn(E) and σp(E). To avoid problems with leakage currents and hysteresis effects with Si-rich SiNx films, these investigations are performed on stoichiometric SiNx films.
UR - http://www.scopus.com/inward/record.url?scp=0032621947&partnerID=8YFLogxK
U2 - 10.1063/1.369725
DO - 10.1063/1.369725
M3 - Article
AN - SCOPUS:0032621947
VL - 85
SP - 3626
EP - 3633
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
IS - 7
ER -