Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 835-838 |
| Seitenumfang | 4 |
| Fachzeitschrift | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Jahrgang | 8 |
| Ausgabenummer | 3 |
| Publikationsstatus | Veröffentlicht - 11 März 2011 |
| Extern publiziert | Ja |
Abstract
We investigate majority- and minority-carrier mobilities in multicrystalline silicon (mc-Si) made from upgraded metallurgical-grade (UMG) feedstock. Since UMG-Si contains high amounts of both boron and phosphorus, a decrease of the carrier mobility due to increased scattering at ionized impurities is expected. Minority-carrier mobilities are determined by measuring effective carrier lifetimes τeff on as-cut wafers, where τeff is limited by carrier diffusion to the unpassivated surfaces. By examining a wafer cut vertically from the mc-Si ingot, we indeed find a reduction in minority-carrier mobility μmin with increasing dopant density. In addition, we find a further strong reduction of μmin in the transition region from p - to n -type silicon. Similar results are obtained regarding the majority-carrier mobility μmaj, which is investigated by combining measurements of the resistivity ρ and the equilibrium hole concentration p0 (equilibrium electron concentration n0 in n -type material) obtained from electrochemical capacitance-voltage measurements. Apart from an overall reduction in μmaj compared to values measured in non-compensated p -type mc-Si, an additional pronounced decrease of the mobility with increasing compensation level is observed. This additional reduction can be explained by reduced screening of the ionized scattering centers. We propose a parameterization of the experimental data based on the Brooks-Herring equation and find excellent agreement between the two.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physica Status Solidi (C) Current Topics in Solid State Physics, Jahrgang 8, Nr. 3, 11.03.2011, S. 835-838.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Carrier mobilities in multicrystalline silicon wafers made from UMG-Si
AU - Lim, Bianca
AU - Wolf, Martin
AU - Schmidt, Jan
PY - 2011/3/11
Y1 - 2011/3/11
N2 - We investigate majority- and minority-carrier mobilities in multicrystalline silicon (mc-Si) made from upgraded metallurgical-grade (UMG) feedstock. Since UMG-Si contains high amounts of both boron and phosphorus, a decrease of the carrier mobility due to increased scattering at ionized impurities is expected. Minority-carrier mobilities are determined by measuring effective carrier lifetimes τeff on as-cut wafers, where τeff is limited by carrier diffusion to the unpassivated surfaces. By examining a wafer cut vertically from the mc-Si ingot, we indeed find a reduction in minority-carrier mobility μmin with increasing dopant density. In addition, we find a further strong reduction of μmin in the transition region from p - to n -type silicon. Similar results are obtained regarding the majority-carrier mobility μmaj, which is investigated by combining measurements of the resistivity ρ and the equilibrium hole concentration p0 (equilibrium electron concentration n0 in n -type material) obtained from electrochemical capacitance-voltage measurements. Apart from an overall reduction in μmaj compared to values measured in non-compensated p -type mc-Si, an additional pronounced decrease of the mobility with increasing compensation level is observed. This additional reduction can be explained by reduced screening of the ionized scattering centers. We propose a parameterization of the experimental data based on the Brooks-Herring equation and find excellent agreement between the two.
AB - We investigate majority- and minority-carrier mobilities in multicrystalline silicon (mc-Si) made from upgraded metallurgical-grade (UMG) feedstock. Since UMG-Si contains high amounts of both boron and phosphorus, a decrease of the carrier mobility due to increased scattering at ionized impurities is expected. Minority-carrier mobilities are determined by measuring effective carrier lifetimes τeff on as-cut wafers, where τeff is limited by carrier diffusion to the unpassivated surfaces. By examining a wafer cut vertically from the mc-Si ingot, we indeed find a reduction in minority-carrier mobility μmin with increasing dopant density. In addition, we find a further strong reduction of μmin in the transition region from p - to n -type silicon. Similar results are obtained regarding the majority-carrier mobility μmaj, which is investigated by combining measurements of the resistivity ρ and the equilibrium hole concentration p0 (equilibrium electron concentration n0 in n -type material) obtained from electrochemical capacitance-voltage measurements. Apart from an overall reduction in μmaj compared to values measured in non-compensated p -type mc-Si, an additional pronounced decrease of the mobility with increasing compensation level is observed. This additional reduction can be explained by reduced screening of the ionized scattering centers. We propose a parameterization of the experimental data based on the Brooks-Herring equation and find excellent agreement between the two.
KW - Carrier mobilities
KW - Compensation
KW - Silicon
UR - http://www.scopus.com/inward/record.url?scp=79952666469&partnerID=8YFLogxK
U2 - 10.1002/pssc.201000144
DO - 10.1002/pssc.201000144
M3 - Article
AN - SCOPUS:79952666469
VL - 8
SP - 835
EP - 838
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
SN - 1862-6351
IS - 3
ER -