Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 67-70 |
| Seitenumfang | 4 |
| Fachzeitschrift | ECS Transactions |
| Jahrgang | 93 |
| Ausgabenummer | 1 |
| Publikationsstatus | Veröffentlicht - 2019 |
| Veranstaltung | 2nd Joint International Technology and Device Meeting, ISTDM 2019 / International Conference on Silicon Epitaxy and Heterostructures, ICSI 2019 Conference - Madison, USA / Vereinigte Staaten Dauer: 2 Juni 2019 → 6 Juni 2019 |
Abstract
In this work, we report on the filtering of threading dislocations in epitaxial growth of thin Ge layers on Si(001) substrates using carbon delta layers. It has been observed that certain epitaxial conditions can enforce the bending of threading dislocations at the carbon layers. Part of the dislocations form closed loops in the bottom layers resulting in defect-reduced top layers. This approach enables the fabrication of thin dislocation-reduced Ge layers grown on Si(001) substrates.
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in: ECS Transactions, Jahrgang 93, Nr. 1, 2019, S. 67-70.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - Carbon-modified-germanium-epitaxy
T2 - 2nd Joint International Technology and Device Meeting, ISTDM 2019 / International Conference on Silicon Epitaxy and Heterostructures, ICSI 2019 Conference
AU - Bamscheidt, Y.
AU - Osten, Hans-Jörg
N1 - Funding information: The authors express sincere thanks to the Laboratory of Nano and Quantum Engineering of the Leibniz University Hannover for providing analytical facilities. We would also like to express our thanks to the German Research Foundation for funding our research in the CMGe-project (DFG: 389061803).
PY - 2019
Y1 - 2019
N2 - In this work, we report on the filtering of threading dislocations in epitaxial growth of thin Ge layers on Si(001) substrates using carbon delta layers. It has been observed that certain epitaxial conditions can enforce the bending of threading dislocations at the carbon layers. Part of the dislocations form closed loops in the bottom layers resulting in defect-reduced top layers. This approach enables the fabrication of thin dislocation-reduced Ge layers grown on Si(001) substrates.
AB - In this work, we report on the filtering of threading dislocations in epitaxial growth of thin Ge layers on Si(001) substrates using carbon delta layers. It has been observed that certain epitaxial conditions can enforce the bending of threading dislocations at the carbon layers. Part of the dislocations form closed loops in the bottom layers resulting in defect-reduced top layers. This approach enables the fabrication of thin dislocation-reduced Ge layers grown on Si(001) substrates.
UR - http://www.scopus.com/inward/record.url?scp=85079749975&partnerID=8YFLogxK
U2 - 10.1149/09301.0067ecst
DO - 10.1149/09301.0067ecst
M3 - Conference article
AN - SCOPUS:85079749975
VL - 93
SP - 67
EP - 70
JO - ECS Transactions
JF - ECS Transactions
SN - 1938-6737
IS - 1
Y2 - 2 June 2019 through 6 June 2019
ER -