Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 012108 |
| Fachzeitschrift | Applied physics letters |
| Jahrgang | 100 |
| Ausgabenummer | 1 |
| Publikationsstatus | Veröffentlicht - 2 Jan. 2012 |
Abstract
Smooth, fully relaxed Ge layers (thickness below 100 nm) were grown directly on Si(001) in a cyclic process flow. Each cycle consists of a low temperature epitaxy step followed by the deposition of less than a monolayer of carbon and subsequent thermal annealing. Full strain relaxation was achieved for 65 nm thin Ge films. Carbon, which is not incorporated homogenously into the Ge layer, prevents the formation of islands during thermal annealing. The lattice mismatch is accommodated via a regular dislocation array of complete edge dislocations localized at the Si/Ge interface.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik und Astronomie (sonstige)
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in: Applied physics letters, Jahrgang 100, Nr. 1, 012108, 02.01.2012.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Carbon-mediated growth of thin, fully relaxed germanium films on silicon
AU - Tetzlaff, D.
AU - Wietler, T. F.
AU - Bugiel, E.
AU - Osten, H. J.
N1 - Funding Information: This work was supported by the German Federal Ministry of Education and Research (BMBF) as part of the MISTRAL project (01BL0805).
PY - 2012/1/2
Y1 - 2012/1/2
N2 - Smooth, fully relaxed Ge layers (thickness below 100 nm) were grown directly on Si(001) in a cyclic process flow. Each cycle consists of a low temperature epitaxy step followed by the deposition of less than a monolayer of carbon and subsequent thermal annealing. Full strain relaxation was achieved for 65 nm thin Ge films. Carbon, which is not incorporated homogenously into the Ge layer, prevents the formation of islands during thermal annealing. The lattice mismatch is accommodated via a regular dislocation array of complete edge dislocations localized at the Si/Ge interface.
AB - Smooth, fully relaxed Ge layers (thickness below 100 nm) were grown directly on Si(001) in a cyclic process flow. Each cycle consists of a low temperature epitaxy step followed by the deposition of less than a monolayer of carbon and subsequent thermal annealing. Full strain relaxation was achieved for 65 nm thin Ge films. Carbon, which is not incorporated homogenously into the Ge layer, prevents the formation of islands during thermal annealing. The lattice mismatch is accommodated via a regular dislocation array of complete edge dislocations localized at the Si/Ge interface.
UR - http://www.scopus.com/inward/record.url?scp=84855553792&partnerID=8YFLogxK
U2 - 10.1063/1.3675450
DO - 10.1063/1.3675450
M3 - Article
AN - SCOPUS:84855553792
VL - 100
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 1
M1 - 012108
ER -