Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 114002 |
| Fachzeitschrift | Semiconductor Science and Technology |
| Jahrgang | 33 |
| Ausgabenummer | 11 |
| Publikationsstatus | Veröffentlicht - 4 Okt. 2018 |
Abstract
We report on the effect of carbon sub-monolayer deposition on the growth of thin Si1-xGex layers on Si(001) substrates. The deposition of a C sub-monolayer prior to full crystallization of the Si1-xGex layer supresses the otherwise energetically favorable Stranksi-Krastanov growth mode upon annealing and yields a smooth surface at high degrees of relaxation for a layer thickness below 100 nm for different Ge contents. The samples are characterized with respect to the surface reconstruction, surface morphology, strain state and defect structure. We discuss the exceptional number of stacking faults in the Si1-xGex layer and propose an explanation for the phenomenon. Finally, we present a process flow to grow smooth, undoped and almost fully relaxed Si1-xGex layers at very low thickness (<100 nm) for virtual substrate applications.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Semiconductor Science and Technology, Jahrgang 33, Nr. 11, 114002, 04.10.2018.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Carbon-mediated epitaxy of SiGe virtual substrates on Si(001)
AU - Schmidt, Jan
AU - Tetzlaff, Dominic
AU - Wietler, Tobias F.
AU - Osten, Hans-Jörg
N1 - Publisher Copyright: © 2018 IOP Publishing Ltd. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2018/10/4
Y1 - 2018/10/4
N2 - We report on the effect of carbon sub-monolayer deposition on the growth of thin Si1-xGex layers on Si(001) substrates. The deposition of a C sub-monolayer prior to full crystallization of the Si1-xGex layer supresses the otherwise energetically favorable Stranksi-Krastanov growth mode upon annealing and yields a smooth surface at high degrees of relaxation for a layer thickness below 100 nm for different Ge contents. The samples are characterized with respect to the surface reconstruction, surface morphology, strain state and defect structure. We discuss the exceptional number of stacking faults in the Si1-xGex layer and propose an explanation for the phenomenon. Finally, we present a process flow to grow smooth, undoped and almost fully relaxed Si1-xGex layers at very low thickness (<100 nm) for virtual substrate applications.
AB - We report on the effect of carbon sub-monolayer deposition on the growth of thin Si1-xGex layers on Si(001) substrates. The deposition of a C sub-monolayer prior to full crystallization of the Si1-xGex layer supresses the otherwise energetically favorable Stranksi-Krastanov growth mode upon annealing and yields a smooth surface at high degrees of relaxation for a layer thickness below 100 nm for different Ge contents. The samples are characterized with respect to the surface reconstruction, surface morphology, strain state and defect structure. We discuss the exceptional number of stacking faults in the Si1-xGex layer and propose an explanation for the phenomenon. Finally, we present a process flow to grow smooth, undoped and almost fully relaxed Si1-xGex layers at very low thickness (<100 nm) for virtual substrate applications.
KW - carbon-mediated epitaxy
KW - molecular beam epitaxy
KW - SiGe
KW - silicon germanium
KW - virtual substrate
UR - http://www.scopus.com/inward/record.url?scp=85055320389&partnerID=8YFLogxK
U2 - 10.1088/1361-6641/aadffc
DO - 10.1088/1361-6641/aadffc
M3 - Article
AN - SCOPUS:85055320389
VL - 33
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 11
M1 - 114002
ER -