Carbon doping of sige

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Beitrag in Buch/Sammelwerk › Forschung › Peer-Review

Autoren

  • H. Jörg Osten

Organisationseinheiten

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Details

OriginalspracheEnglisch
Titel des SammelwerksSilicon Heterostructure Handbook
UntertitelMaterials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy
Seiten2.9-157-2.9-170
ISBN (elektronisch)9781420026580
PublikationsstatusVeröffentlicht - 1 Jan. 2005

ASJC Scopus Sachgebiete

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Carbon doping of sige. / Osten, H. Jörg.
Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy. 2005. S. 2.9-157-2.9-170.

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Beitrag in Buch/Sammelwerk › Forschung › Peer-Review

Osten, HJ 2005, Carbon doping of sige. in Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy. S. 2.9-157-2.9-170.
Osten, H. J. (2005). Carbon doping of sige. In Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy (S. 2.9-157-2.9-170)
Osten HJ. Carbon doping of sige. in Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy. 2005. S. 2.9-157-2.9-170
Osten, H. Jörg. / Carbon doping of sige. Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy. 2005. S. 2.9-157-2.9-170
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