Capacitive Gate Drive Signal Transmission with Transient Immunity up to 300 V/ns

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

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OriginalspracheEnglisch
Titel des SammelwerksANALOG 2016 - 15. ITG/GMM-Fachtagung
Herausgeber (Verlag)VDE Verlag GmbH
Seiten53-57
Seitenumfang5
ISBN (elektronisch)9783800742653
PublikationsstatusVeröffentlicht - 2016
Extern publiziertJa
Veranstaltung15. ITG/GMM-Fachtagung ANALOG 2016 - 15th ITG/GMM Conference ANALOG 2016 - Bremen, Deutschland
Dauer: 12 Sept. 201614 Sept. 2016

Publikationsreihe

NameANALOG 2016 - 15. ITG/GMM-Fachtagung

Abstract

The increasing slew rate of modern power switches can increase the efficiency and reduce the size of power electronic applications. This requires a fast and robust signal transmission to the gate driver of the high-side switch. This work proposes a galvanically isolated capacitive signal transmission circuit to increase common mode transient immunity (CMTI). An additional signal path is introduced to significantly improve the transmission robustness for small duty cycles to assure a safe turn-off of the power switch. To limit the input voltage range at the comparator on the secondary side during fast high-side transitions, a clamping structure is implemented. A comparison between a conventional and the proposed signal transmission is performed using transistor level simulations. A propagation delay of about 2 ns over a wide range of voltage transients of up to 300 V/ns at input voltages up to 600 V is achieved.

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Capacitive Gate Drive Signal Transmission with Transient Immunity up to 300 V/ns. / Hackel, Jonathan; Seidel, Achim; Wittmann, Juergen et al.
ANALOG 2016 - 15. ITG/GMM-Fachtagung. VDE Verlag GmbH, 2016. S. 53-57 (ANALOG 2016 - 15. ITG/GMM-Fachtagung).

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

Hackel, J, Seidel, A, Wittmann, J & Wicht, B 2016, Capacitive Gate Drive Signal Transmission with Transient Immunity up to 300 V/ns. in ANALOG 2016 - 15. ITG/GMM-Fachtagung. ANALOG 2016 - 15. ITG/GMM-Fachtagung, VDE Verlag GmbH, S. 53-57, 15. ITG/GMM-Fachtagung ANALOG 2016 - 15th ITG/GMM Conference ANALOG 2016, Bremen, Deutschland, 12 Sept. 2016.
Hackel, J., Seidel, A., Wittmann, J., & Wicht, B. (2016). Capacitive Gate Drive Signal Transmission with Transient Immunity up to 300 V/ns. In ANALOG 2016 - 15. ITG/GMM-Fachtagung (S. 53-57). (ANALOG 2016 - 15. ITG/GMM-Fachtagung). VDE Verlag GmbH.
Hackel J, Seidel A, Wittmann J, Wicht B. Capacitive Gate Drive Signal Transmission with Transient Immunity up to 300 V/ns. in ANALOG 2016 - 15. ITG/GMM-Fachtagung. VDE Verlag GmbH. 2016. S. 53-57. (ANALOG 2016 - 15. ITG/GMM-Fachtagung).
Hackel, Jonathan ; Seidel, Achim ; Wittmann, Juergen et al. / Capacitive Gate Drive Signal Transmission with Transient Immunity up to 300 V/ns. ANALOG 2016 - 15. ITG/GMM-Fachtagung. VDE Verlag GmbH, 2016. S. 53-57 (ANALOG 2016 - 15. ITG/GMM-Fachtagung).
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abstract = "The increasing slew rate of modern power switches can increase the efficiency and reduce the size of power electronic applications. This requires a fast and robust signal transmission to the gate driver of the high-side switch. This work proposes a galvanically isolated capacitive signal transmission circuit to increase common mode transient immunity (CMTI). An additional signal path is introduced to significantly improve the transmission robustness for small duty cycles to assure a safe turn-off of the power switch. To limit the input voltage range at the comparator on the secondary side during fast high-side transitions, a clamping structure is implemented. A comparison between a conventional and the proposed signal transmission is performed using transistor level simulations. A propagation delay of about 2 ns over a wide range of voltage transients of up to 300 V/ns at input voltages up to 600 V is achieved.",
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