Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 033111 |
| Seiten (von - bis) | 1-3 |
| Seitenumfang | 3 |
| Fachzeitschrift | Applied physics letters |
| Jahrgang | 86 |
| Ausgabenummer | 3 |
| Publikationsstatus | Veröffentlicht - 14 Jan. 2005 |
Abstract
A special solid-phase epitaxy technique utilizing the surfactant B for the growth of crystalline Si-QWs on Ca F2 Si (111) enabled us to grow Ca F2 SiCa F2 double-barrier diodes exhibiting resonant tunneling effects from 77 K up to room temperature with peak voltages at 0.2 eV, which is very close to simple resonant tunneling model predictions. The peak voltages and currents were virtually independent of temperature. No trapping or hysteresis effects were found in the I-V characteristics which exhibited 2-7 orders of magnitude larger peak current densities than previously reported Ca F2 SiCa F2 RTDs.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik und Astronomie (sonstige)
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in: Applied physics letters, Jahrgang 86, Nr. 3, 033111, 14.01.2005, S. 1-3.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Ca F2 SiCa F2 resonant tunneling diodes grown by B surfactant-mediated epitaxy
AU - Wang, C. R.
AU - Bierkandt, M.
AU - Paprotta, S.
AU - Wietler, T.
AU - Hofmann, K. R.
PY - 2005/1/14
Y1 - 2005/1/14
N2 - A special solid-phase epitaxy technique utilizing the surfactant B for the growth of crystalline Si-QWs on Ca F2 Si (111) enabled us to grow Ca F2 SiCa F2 double-barrier diodes exhibiting resonant tunneling effects from 77 K up to room temperature with peak voltages at 0.2 eV, which is very close to simple resonant tunneling model predictions. The peak voltages and currents were virtually independent of temperature. No trapping or hysteresis effects were found in the I-V characteristics which exhibited 2-7 orders of magnitude larger peak current densities than previously reported Ca F2 SiCa F2 RTDs.
AB - A special solid-phase epitaxy technique utilizing the surfactant B for the growth of crystalline Si-QWs on Ca F2 Si (111) enabled us to grow Ca F2 SiCa F2 double-barrier diodes exhibiting resonant tunneling effects from 77 K up to room temperature with peak voltages at 0.2 eV, which is very close to simple resonant tunneling model predictions. The peak voltages and currents were virtually independent of temperature. No trapping or hysteresis effects were found in the I-V characteristics which exhibited 2-7 orders of magnitude larger peak current densities than previously reported Ca F2 SiCa F2 RTDs.
UR - http://www.scopus.com/inward/record.url?scp=17044387736&partnerID=8YFLogxK
U2 - 10.1063/1.1853522
DO - 10.1063/1.1853522
M3 - Article
AN - SCOPUS:17044387736
VL - 86
SP - 1
EP - 3
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 3
M1 - 033111
ER -