Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 |
| Herausgeber (Verlag) | Institute of Electrical and Electronics Engineers Inc. |
| Seiten | 852-856 |
| Seitenumfang | 5 |
| ISBN (elektronisch) | 9781479943982 |
| Publikationsstatus | Veröffentlicht - 15 Okt. 2014 |
| Veranstaltung | 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, USA / Vereinigte Staaten Dauer: 8 Juni 2014 → 13 Juni 2014 |
Abstract
We propose a process for a back-junction back-contacted solar cell (including module interconnection) combining a high efficiency potential and a lean process flow. This structure offers potential for (i) a high Jsc - no optical shading losses due to the absence of front-side metallization and minimized absorption losses at the cell front-side, (ii) a high Voc - excellent passivation including 'passivated contacts' based on poly-Si/c-Si junctions, and (iii) a high FF - large area contacts with low contact resistance and the absence of busbar losses due to a two-layer metallization. A lean process flow becomes feasible by utilizing two enabling technologies - in situ patterned ion implantation and module interconnection by laser welding (AMELI). We present experimental results for the main building blocks: (1) Patterned ion implantation yields an excellent recombination behavior homogeneously on 6″, (2) Ion-implanted poly-Si / c-Si junctions enabling Voc values up to 742 mV and J0e values down to 1.3fA/cm2, (3) Al2O3 front-side passivation enabling Jsc values up to 41.8 mA/cm2 and IQE values > 1 for λ < 350 nm, and (4) busbarless, silver-free AMELI two-layer interconnection. As an intermediate step, we fabricated ion-implanted BJBC cells with conventional junctions and metallization with efficiencies up to 22.1% on 6″.
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
Ziele für nachhaltige Entwicklung
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. S. 852-856 6925049.
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Building blocks for back-junction back-contacted cells and modules with ion-implanted poly-Si junctions
AU - Peibst, Robby
AU - Romer, Udo
AU - Larionova, Yevgeniya
AU - Schulte-Huxel, Henning
AU - Ohrdes, Tobias
AU - Haberle, Michael
AU - Lim, Bianca
AU - Krugener, Jan
AU - Stichtenoth, Daniel
AU - Wutherich, Tobias
AU - Schollhorn, Claus
AU - Graff, John
AU - Brendel, Rolf
PY - 2014/10/15
Y1 - 2014/10/15
N2 - We propose a process for a back-junction back-contacted solar cell (including module interconnection) combining a high efficiency potential and a lean process flow. This structure offers potential for (i) a high Jsc - no optical shading losses due to the absence of front-side metallization and minimized absorption losses at the cell front-side, (ii) a high Voc - excellent passivation including 'passivated contacts' based on poly-Si/c-Si junctions, and (iii) a high FF - large area contacts with low contact resistance and the absence of busbar losses due to a two-layer metallization. A lean process flow becomes feasible by utilizing two enabling technologies - in situ patterned ion implantation and module interconnection by laser welding (AMELI). We present experimental results for the main building blocks: (1) Patterned ion implantation yields an excellent recombination behavior homogeneously on 6″, (2) Ion-implanted poly-Si / c-Si junctions enabling Voc values up to 742 mV and J0e values down to 1.3fA/cm2, (3) Al2O3 front-side passivation enabling Jsc values up to 41.8 mA/cm2 and IQE values > 1 for λ < 350 nm, and (4) busbarless, silver-free AMELI two-layer interconnection. As an intermediate step, we fabricated ion-implanted BJBC cells with conventional junctions and metallization with efficiencies up to 22.1% on 6″.
AB - We propose a process for a back-junction back-contacted solar cell (including module interconnection) combining a high efficiency potential and a lean process flow. This structure offers potential for (i) a high Jsc - no optical shading losses due to the absence of front-side metallization and minimized absorption losses at the cell front-side, (ii) a high Voc - excellent passivation including 'passivated contacts' based on poly-Si/c-Si junctions, and (iii) a high FF - large area contacts with low contact resistance and the absence of busbar losses due to a two-layer metallization. A lean process flow becomes feasible by utilizing two enabling technologies - in situ patterned ion implantation and module interconnection by laser welding (AMELI). We present experimental results for the main building blocks: (1) Patterned ion implantation yields an excellent recombination behavior homogeneously on 6″, (2) Ion-implanted poly-Si / c-Si junctions enabling Voc values up to 742 mV and J0e values down to 1.3fA/cm2, (3) Al2O3 front-side passivation enabling Jsc values up to 41.8 mA/cm2 and IQE values > 1 for λ < 350 nm, and (4) busbarless, silver-free AMELI two-layer interconnection. As an intermediate step, we fabricated ion-implanted BJBC cells with conventional junctions and metallization with efficiencies up to 22.1% on 6″.
KW - back contact solar cells
KW - Ion implantation
KW - module-level interconnection
KW - Photovoltaic cell
KW - Silicon
KW - Solar energy
UR - http://www.scopus.com/inward/record.url?scp=84912078142&partnerID=8YFLogxK
U2 - 10.1109/pvsc.2014.6925049
DO - 10.1109/pvsc.2014.6925049
M3 - Conference contribution
AN - SCOPUS:84912078142
SP - 852
EP - 856
BT - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Y2 - 8 June 2014 through 13 June 2014
ER -