Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 1475-1486 |
| Seitenumfang | 12 |
| Fachzeitschrift | Progress in Photovoltaics: Research and Applications |
| Jahrgang | 24 |
| Ausgabenummer | 12 |
| Frühes Online-Datum | 10 Okt. 2015 |
| Publikationsstatus | Veröffentlicht - 14 Nov. 2016 |
Abstract
We demonstrate a procedure for quantifying efficiency gains that treats resistive, recombinative, and optical losses on an equal footing. For this, we apply our conductive boundary model as implemented in the Quokka cell simulator. The generation profile is calculated with a novel analytical light-trapping model. This model parameterizes the measured reflection spectra and is capable of turning the experimental case gradually into an ideal Lambertian scheme. Simulated and measured short-circuit current densities agree for our 21.2%-efficient screen-printed passivated emitter and rear cell and for our 23.4%-efficient ion-implanted laser-processed interdigitated back-contacted cell. For the loss analysis of these two cells, we set all experimentally accessible control parameters (e.g., saturation current densities, sheet resistances, and carrier lifetimes) one at a time to ideal values. The efficiency gap to the ultimate limit of 29% is thereby fully explained in terms of both individual improvements and their respective synergistic effects. This approach allows comparing loss structures of different types of solar cells, for example, passivated emitter and rear cell and interdigitated back-contacted cells.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Energie (insg.)
- Erneuerbare Energien, Nachhaltigkeit und Umwelt
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: Progress in Photovoltaics: Research and Applications, Jahrgang 24, Nr. 12, 14.11.2016, S. 1475-1486.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Breakdown of the efficiency gap to 29% based on experimental input data and modeling
AU - Brendel, Rolf
AU - Dullweber, Thorsten
AU - Peibst, Robby
AU - Kranz, Christopher
AU - Merkle, Agnes
AU - Walter, Daniel
PY - 2016/11/14
Y1 - 2016/11/14
N2 - We demonstrate a procedure for quantifying efficiency gains that treats resistive, recombinative, and optical losses on an equal footing. For this, we apply our conductive boundary model as implemented in the Quokka cell simulator. The generation profile is calculated with a novel analytical light-trapping model. This model parameterizes the measured reflection spectra and is capable of turning the experimental case gradually into an ideal Lambertian scheme. Simulated and measured short-circuit current densities agree for our 21.2%-efficient screen-printed passivated emitter and rear cell and for our 23.4%-efficient ion-implanted laser-processed interdigitated back-contacted cell. For the loss analysis of these two cells, we set all experimentally accessible control parameters (e.g., saturation current densities, sheet resistances, and carrier lifetimes) one at a time to ideal values. The efficiency gap to the ultimate limit of 29% is thereby fully explained in terms of both individual improvements and their respective synergistic effects. This approach allows comparing loss structures of different types of solar cells, for example, passivated emitter and rear cell and interdigitated back-contacted cells.
AB - We demonstrate a procedure for quantifying efficiency gains that treats resistive, recombinative, and optical losses on an equal footing. For this, we apply our conductive boundary model as implemented in the Quokka cell simulator. The generation profile is calculated with a novel analytical light-trapping model. This model parameterizes the measured reflection spectra and is capable of turning the experimental case gradually into an ideal Lambertian scheme. Simulated and measured short-circuit current densities agree for our 21.2%-efficient screen-printed passivated emitter and rear cell and for our 23.4%-efficient ion-implanted laser-processed interdigitated back-contacted cell. For the loss analysis of these two cells, we set all experimentally accessible control parameters (e.g., saturation current densities, sheet resistances, and carrier lifetimes) one at a time to ideal values. The efficiency gap to the ultimate limit of 29% is thereby fully explained in terms of both individual improvements and their respective synergistic effects. This approach allows comparing loss structures of different types of solar cells, for example, passivated emitter and rear cell and interdigitated back-contacted cells.
KW - conductive boundary model
KW - IBC
KW - interdigitated back-contacted cell
KW - loss analysis
KW - passivated emitter and rear cell
KW - PERC
KW - silicon solar cell
UR - http://www.scopus.com/inward/record.url?scp=84944409845&partnerID=8YFLogxK
U2 - 10.1002/pip.2696
DO - 10.1002/pip.2696
M3 - Article
AN - SCOPUS:84944409845
VL - 24
SP - 1475
EP - 1486
JO - Progress in Photovoltaics: Research and Applications
JF - Progress in Photovoltaics: Research and Applications
SN - 1062-7995
IS - 12
ER -