Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 6329922 |
| Seiten (von - bis) | 212-216 |
| Seitenumfang | 5 |
| Fachzeitschrift | IEEE Journal of Photovoltaics |
| Jahrgang | 3 |
| Ausgabenummer | 1 |
| Publikationsstatus | Veröffentlicht - 12 Okt. 2012 |
Abstract
Contacting silicon solar cells through in-line high-rate evaporation of aluminum leads to thermomechanical stresses and, thus, to bowing of the solar cells. Understanding the formation of the cell bow is essential for improving the deposition process. We deposit 2 μm-thick aluminum layers onto 230 μm-thick planar p-type silicon wafers of edge lengths of 100, 125, and 156-mm and measure the wafer bow after the deposition. The bow is proportional to b2d/W2, where d is the aluminum layer thickness, Wthe wafer thickness, and b the wafer edge length. We measure a lower bow than expected by the linear elastic stress theory and show this to be caused by plastic deformation in the Al layer. Due to plastic deformation, only the first 70 K of temperature change actually causes a bow.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: IEEE Journal of Photovoltaics, Jahrgang 3, Nr. 1, 6329922, 12.10.2012, S. 212-216.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Bow of Silicon Wafers After In-Line High-Rate Evaporation of Aluminum
AU - Mader, Christoph
AU - Eitner, Ulrich
AU - Kajari-Schröder, Sarah
AU - Brendel, Rolf
PY - 2012/10/12
Y1 - 2012/10/12
N2 - Contacting silicon solar cells through in-line high-rate evaporation of aluminum leads to thermomechanical stresses and, thus, to bowing of the solar cells. Understanding the formation of the cell bow is essential for improving the deposition process. We deposit 2 μm-thick aluminum layers onto 230 μm-thick planar p-type silicon wafers of edge lengths of 100, 125, and 156-mm and measure the wafer bow after the deposition. The bow is proportional to b2d/W2, where d is the aluminum layer thickness, Wthe wafer thickness, and b the wafer edge length. We measure a lower bow than expected by the linear elastic stress theory and show this to be caused by plastic deformation in the Al layer. Due to plastic deformation, only the first 70 K of temperature change actually causes a bow.
AB - Contacting silicon solar cells through in-line high-rate evaporation of aluminum leads to thermomechanical stresses and, thus, to bowing of the solar cells. Understanding the formation of the cell bow is essential for improving the deposition process. We deposit 2 μm-thick aluminum layers onto 230 μm-thick planar p-type silicon wafers of edge lengths of 100, 125, and 156-mm and measure the wafer bow after the deposition. The bow is proportional to b2d/W2, where d is the aluminum layer thickness, Wthe wafer thickness, and b the wafer edge length. We measure a lower bow than expected by the linear elastic stress theory and show this to be caused by plastic deformation in the Al layer. Due to plastic deformation, only the first 70 K of temperature change actually causes a bow.
KW - Elastoplastic deformation
KW - in-line evaporation
KW - silicon solar cell
KW - wafer bow
UR - http://www.scopus.com/inward/record.url?scp=84871727476&partnerID=8YFLogxK
U2 - 10.1109/JPHOTOV.2012.2218578
DO - 10.1109/JPHOTOV.2012.2218578
M3 - Article
AN - SCOPUS:84871727476
VL - 3
SP - 212
EP - 216
JO - IEEE Journal of Photovoltaics
JF - IEEE Journal of Photovoltaics
SN - 2156-3381
IS - 1
M1 - 6329922
ER -