Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 360-362 |
| Seitenumfang | 3 |
| Fachzeitschrift | Applied physics letters |
| Jahrgang | 64 |
| Ausgabenummer | 3 |
| Publikationsstatus | Veröffentlicht - 17 Jan. 1994 |
| Extern publiziert | Ja |
Abstract
10-nm-thick germanium layers have been grown on Si(100) with boron as a surfactant with three different growth procedures, and investigated with reflection high-energy electron diffraction, transmission electron microscopy, and secondary ion mass spectroscopy. We obtained smooth and completely closed epitaxial germanium layers only by depositing the boron on top of the amorphous germanium layer followed by a post-annealing step. The surface energy anisotropy of the germanium will be affected by the presence of boron in this equilibrium process. The islanding observed in all other growth processes can be understood by taking into account that boron is a typical nonsegregating material in Ge below 600°C and a surfactant acts mainly due to its presence in the growing front.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik und Astronomie (sonstige)
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in: Applied physics letters, Jahrgang 64, Nr. 3, 17.01.1994, S. 360-362.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Boron-controlled solid phase epitaxy of germanium on silicon
T2 - A new nonsegregating surfactant
AU - Klatt, J.
AU - Krüger, D.
AU - Bugiel, E.
AU - Osten, H. J.
PY - 1994/1/17
Y1 - 1994/1/17
N2 - 10-nm-thick germanium layers have been grown on Si(100) with boron as a surfactant with three different growth procedures, and investigated with reflection high-energy electron diffraction, transmission electron microscopy, and secondary ion mass spectroscopy. We obtained smooth and completely closed epitaxial germanium layers only by depositing the boron on top of the amorphous germanium layer followed by a post-annealing step. The surface energy anisotropy of the germanium will be affected by the presence of boron in this equilibrium process. The islanding observed in all other growth processes can be understood by taking into account that boron is a typical nonsegregating material in Ge below 600°C and a surfactant acts mainly due to its presence in the growing front.
AB - 10-nm-thick germanium layers have been grown on Si(100) with boron as a surfactant with three different growth procedures, and investigated with reflection high-energy electron diffraction, transmission electron microscopy, and secondary ion mass spectroscopy. We obtained smooth and completely closed epitaxial germanium layers only by depositing the boron on top of the amorphous germanium layer followed by a post-annealing step. The surface energy anisotropy of the germanium will be affected by the presence of boron in this equilibrium process. The islanding observed in all other growth processes can be understood by taking into account that boron is a typical nonsegregating material in Ge below 600°C and a surfactant acts mainly due to its presence in the growing front.
UR - http://www.scopus.com/inward/record.url?scp=0041127778&partnerID=8YFLogxK
U2 - 10.1063/1.111148
DO - 10.1063/1.111148
M3 - Article
AN - SCOPUS:0041127778
VL - 64
SP - 360
EP - 362
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 3
ER -