Boron surfactant enhanced growth of thin Si films on CaF2/SI

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • C. R. Wang
  • B. H. Müller
  • E. Bugiel
  • T. Wietler
  • M. Bierkandt
  • K. R. Hofmann
  • P. Zaumseil

Organisationseinheiten

Externe Organisationen

  • Leibniz-Institut für innovative Mikroelektronik (IHP)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)2246-2250
Seitenumfang5
FachzeitschriftJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Jahrgang22
Ausgabenummer6
PublikationsstatusVeröffentlicht - 7 Okt. 2004

Abstract

Boron surfactant enhanced solid phase epitaxy (SPE) of thin Si films on CaF2/Si(111) was analyzed. Deposition of 1ML of boron atoms on the CaF2 surface at room temperature before Si deposition resulted in the formation of Si clusters. Deposition of boron atoms directly on top of the amorphous Si film followed by annealing to about 635°C resulted in continous and smooth epitaxial Si films on CaF2 with sharp surface reconstruction. It was found that the quality of layers obtained using the annealing method was much better than SPE with 1 ML of surfactant predeposited on the CaF2 surface.

ASJC Scopus Sachgebiete

Zitieren

Boron surfactant enhanced growth of thin Si films on CaF2/SI. / Wang, C. R.; Müller, B. H.; Bugiel, E. et al.
in: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Jahrgang 22, Nr. 6, 07.10.2004, S. 2246-2250.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Wang, CR, Müller, BH, Bugiel, E, Wietler, T, Bierkandt, M, Hofmann, KR & Zaumseil, P 2004, 'Boron surfactant enhanced growth of thin Si films on CaF2/SI', Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Jg. 22, Nr. 6, S. 2246-2250. https://doi.org/10.1116/1.1789215
Wang, C. R., Müller, B. H., Bugiel, E., Wietler, T., Bierkandt, M., Hofmann, K. R., & Zaumseil, P. (2004). Boron surfactant enhanced growth of thin Si films on CaF2/SI. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 22(6), 2246-2250. https://doi.org/10.1116/1.1789215
Wang CR, Müller BH, Bugiel E, Wietler T, Bierkandt M, Hofmann KR et al. Boron surfactant enhanced growth of thin Si films on CaF2/SI. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2004 Okt 7;22(6):2246-2250. doi: 10.1116/1.1789215
Wang, C. R. ; Müller, B. H. ; Bugiel, E. et al. / Boron surfactant enhanced growth of thin Si films on CaF2/SI. in: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2004 ; Jahrgang 22, Nr. 6. S. 2246-2250.
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AU - Müller, B. H.

AU - Bugiel, E.

AU - Wietler, T.

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AU - Hofmann, K. R.

AU - Zaumseil, P.

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