Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 1055-1058 |
| Seitenumfang | 4 |
| Fachzeitschrift | Physica E: Low-Dimensional Systems and Nanostructures |
| Jahrgang | 40 |
| Ausgabenummer | 5 |
| Publikationsstatus | Veröffentlicht - 1 März 2008 |
Abstract
We explore the full counting statistics of single electron tunneling through a quantum dot using a quantum point contact as non-invasive high bandwidth charge detector. The distribution of counted tunneling events is measured as a function of gate and source-drain-voltage for several consecutive electron numbers on the quantum dot. For bias voltages at which excited states become accessible we find a bimodal characteristic of the counting distribution. The bimodal distribution arises from a slow switching between different electron configurations on the dot. To characterize the switching process we analyze the time dependence of the number of electrons passing the dot in a given time.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Atom- und Molekularphysik sowie Optik
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physica E: Low-Dimensional Systems and Nanostructures, Jahrgang 40, Nr. 5, 01.03.2008, S. 1055-1058.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Bimodal statistic on a single dot device
AU - Fricke, C.
AU - Hohls, F.
AU - Wegscheider, W.
AU - Haug, R. J.
PY - 2008/3/1
Y1 - 2008/3/1
N2 - We explore the full counting statistics of single electron tunneling through a quantum dot using a quantum point contact as non-invasive high bandwidth charge detector. The distribution of counted tunneling events is measured as a function of gate and source-drain-voltage for several consecutive electron numbers on the quantum dot. For bias voltages at which excited states become accessible we find a bimodal characteristic of the counting distribution. The bimodal distribution arises from a slow switching between different electron configurations on the dot. To characterize the switching process we analyze the time dependence of the number of electrons passing the dot in a given time.
AB - We explore the full counting statistics of single electron tunneling through a quantum dot using a quantum point contact as non-invasive high bandwidth charge detector. The distribution of counted tunneling events is measured as a function of gate and source-drain-voltage for several consecutive electron numbers on the quantum dot. For bias voltages at which excited states become accessible we find a bimodal characteristic of the counting distribution. The bimodal distribution arises from a slow switching between different electron configurations on the dot. To characterize the switching process we analyze the time dependence of the number of electrons passing the dot in a given time.
KW - Correlation effects
KW - Full counting statistics
KW - Quantum dot
KW - Shot noise
UR - http://www.scopus.com/inward/record.url?scp=39649085564&partnerID=8YFLogxK
U2 - 10.1016/j.physe.2007.10.063
DO - 10.1016/j.physe.2007.10.063
M3 - Article
AN - SCOPUS:39649085564
VL - 40
SP - 1055
EP - 1058
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 5
ER -