Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 326-330 |
| Seitenumfang | 5 |
| Fachzeitschrift | Solar Energy Materials and Solar Cells |
| Jahrgang | 157 |
| Frühes Online-Datum | 4 Juni 2016 |
| Publikationsstatus | Veröffentlicht - Dez. 2016 |
Abstract
For boron implants made with ion implanters designed for PV applications, a variety of ion species BFx (x=0.2) is implanted, while BF2 accounts for the lions share. We investigate the impact of the BF2 implantation dose and the annealing conditions on the resulting electrical characteristics of industrial bifacial n-type PERT solar cells. For an annealing temperature of 950 °C, we observe a steep increase in the emitter saturation current density for BF2 implant doses above 1.75×1015 cm-2. We compare co-annealed BF2- and B-implanted solar cells and achieve maximum energy conversion efficiencies of 20.6% with BF2 and 21.0% with B, respectively. Separate annealing processes for the p+ and n+ doped regions result in even higher energy conversion efficiencies of 20.8% with BF2 and 21.5% with B emitter implant. An optimized double-layer ARC applied on the separately annealed cells further increases the efficiency up to 20.9% for BF2 and up to 21.8% for B emitter implant. All efficiency values are independently confirmed. The solar cells have bifacial factors between 97.3% and 99.4%. The BF2-implanted solar cells with highest efficiency feature an emitter with a sheet resistance of 180 Ω/sq. contacted by a commercially available Ag/Al paste with specific contact resistance of less than 10 mΩ cm2.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Energie (insg.)
- Erneuerbare Energien, Nachhaltigkeit und Umwelt
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
Ziele für nachhaltige Entwicklung
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in: Solar Energy Materials and Solar Cells, Jahrgang 157, 12.2016, S. 326-330.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Bifacial, fully screen-printed n-PERT solar cells with BF2 and B implanted emitters
AU - Kiefer, F.
AU - Krügener, J.
AU - Heinemeyer, F.
AU - Jestremski, M.
AU - Osten, H. J.
AU - Brendel, R.
AU - Peibst, R.
N1 - Funding information: This work was funded by the German Federal Ministry for Economic Affairs and Energy under Grant 0325480A (CHIP). We thank Sabine Kirstein, Andreas Klatt and Peter Giesel for sample processing, and Yevgeniya Larionova, Agnes Merkle and Michael Rienäcker for valuable discussions.
PY - 2016/12
Y1 - 2016/12
N2 - For boron implants made with ion implanters designed for PV applications, a variety of ion species BFx (x=0.2) is implanted, while BF2 accounts for the lions share. We investigate the impact of the BF2 implantation dose and the annealing conditions on the resulting electrical characteristics of industrial bifacial n-type PERT solar cells. For an annealing temperature of 950 °C, we observe a steep increase in the emitter saturation current density for BF2 implant doses above 1.75×1015 cm-2. We compare co-annealed BF2- and B-implanted solar cells and achieve maximum energy conversion efficiencies of 20.6% with BF2 and 21.0% with B, respectively. Separate annealing processes for the p+ and n+ doped regions result in even higher energy conversion efficiencies of 20.8% with BF2 and 21.5% with B emitter implant. An optimized double-layer ARC applied on the separately annealed cells further increases the efficiency up to 20.9% for BF2 and up to 21.8% for B emitter implant. All efficiency values are independently confirmed. The solar cells have bifacial factors between 97.3% and 99.4%. The BF2-implanted solar cells with highest efficiency feature an emitter with a sheet resistance of 180 Ω/sq. contacted by a commercially available Ag/Al paste with specific contact resistance of less than 10 mΩ cm2.
AB - For boron implants made with ion implanters designed for PV applications, a variety of ion species BFx (x=0.2) is implanted, while BF2 accounts for the lions share. We investigate the impact of the BF2 implantation dose and the annealing conditions on the resulting electrical characteristics of industrial bifacial n-type PERT solar cells. For an annealing temperature of 950 °C, we observe a steep increase in the emitter saturation current density for BF2 implant doses above 1.75×1015 cm-2. We compare co-annealed BF2- and B-implanted solar cells and achieve maximum energy conversion efficiencies of 20.6% with BF2 and 21.0% with B, respectively. Separate annealing processes for the p+ and n+ doped regions result in even higher energy conversion efficiencies of 20.8% with BF2 and 21.5% with B emitter implant. An optimized double-layer ARC applied on the separately annealed cells further increases the efficiency up to 20.9% for BF2 and up to 21.8% for B emitter implant. All efficiency values are independently confirmed. The solar cells have bifacial factors between 97.3% and 99.4%. The BF2-implanted solar cells with highest efficiency feature an emitter with a sheet resistance of 180 Ω/sq. contacted by a commercially available Ag/Al paste with specific contact resistance of less than 10 mΩ cm2.
UR - http://www.scopus.com/inward/record.url?scp=84971612119&partnerID=8YFLogxK
U2 - 10.1016/j.solmat.2016.05.028
DO - 10.1016/j.solmat.2016.05.028
M3 - Article
AN - SCOPUS:84971612119
VL - 157
SP - 326
EP - 330
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
SN - 0927-0248
ER -