Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 035005 |
| Fachzeitschrift | 2D Materials |
| Jahrgang | 3 |
| Ausgabenummer | 3 |
| Publikationsstatus | Veröffentlicht - 11 Juli 2016 |
Abstract
The electronic dispersion of a graphene bilayer is highly dependent on rotational mismatch between layers and can be further manipulated by electrical gating. This allows for an unprecedented control over electronic properties and opens up the possibility of flexible band structure engineering. Here we present novel magnetotransport data in a twisted bilayer, crossing the energetic border between decoupled monolayers and coupled bilayer. In addition a transition in Berry phase between π and 2π is observed at intermediate magnetic fields. Analysis of Fermi velocities and gate induced charge carrier densities suggests an important role of strong layer asymmetry for the observed phenomena.
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- Physik der kondensierten Materie
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- Werkstoffmechanik
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in: 2D Materials, Jahrgang 3, Nr. 3, 035005, 11.07.2016.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Berry phase transition in twisted bilayer graphene
AU - Rode, Johannes C.
AU - Smirnov, Dmitri
AU - Schmidt, Hennrik
AU - Haug, Rolf J.
N1 - Funding information: This work was supported by the DFG within the priority program SPP 1459, graphene and by the School for Contacts in Nanosytems. Johannes C Rode acknowledges support from Hannover School for Nanotechnology. The authors thank Hadar Steinberg for useful discussions.
PY - 2016/7/11
Y1 - 2016/7/11
N2 - The electronic dispersion of a graphene bilayer is highly dependent on rotational mismatch between layers and can be further manipulated by electrical gating. This allows for an unprecedented control over electronic properties and opens up the possibility of flexible band structure engineering. Here we present novel magnetotransport data in a twisted bilayer, crossing the energetic border between decoupled monolayers and coupled bilayer. In addition a transition in Berry phase between π and 2π is observed at intermediate magnetic fields. Analysis of Fermi velocities and gate induced charge carrier densities suggests an important role of strong layer asymmetry for the observed phenomena.
AB - The electronic dispersion of a graphene bilayer is highly dependent on rotational mismatch between layers and can be further manipulated by electrical gating. This allows for an unprecedented control over electronic properties and opens up the possibility of flexible band structure engineering. Here we present novel magnetotransport data in a twisted bilayer, crossing the energetic border between decoupled monolayers and coupled bilayer. In addition a transition in Berry phase between π and 2π is observed at intermediate magnetic fields. Analysis of Fermi velocities and gate induced charge carrier densities suggests an important role of strong layer asymmetry for the observed phenomena.
KW - Berry phase
KW - Fermi velocity
KW - Magnetotransport
KW - Twisted graphene bilayer
UR - http://www.scopus.com/inward/record.url?scp=84992341276&partnerID=8YFLogxK
U2 - 10.1088/2053-1583/3/3/035005
DO - 10.1088/2053-1583/3/3/035005
M3 - Article
AN - SCOPUS:84992341276
VL - 3
JO - 2D Materials
JF - 2D Materials
SN - 2053-1583
IS - 3
M1 - 035005
ER -