Barrier-free subsurface incorporation of 3d metal atoms into Bi(111) films

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autorschaft

  • Claudius Klein
  • N. J. Vollmers
  • U. Gerstmann
  • P. Zahl
  • Daniel Lükermann
  • G. Jnawali
  • Herbert Pfnür
  • Christoph Tegenkamp
  • P. Sutter
  • Wolf Gero Schmidt
  • M. Horn-Von Hoegen

Organisationseinheiten

Externe Organisationen

  • Universität Duisburg-Essen
  • Universität Paderborn
  • Brookhaven National Laboratory (BNL)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Aufsatznummer195441
FachzeitschriftPhysical Review B - Condensed Matter and Materials Physics
Jahrgang91
Ausgabenummer19
PublikationsstatusVeröffentlicht - 27 Mai 2015

Abstract

By combining scanning tunneling microscopy with density functional theory it is shown that the Bi(111) surface provides a well-defined incorporation site in the first bilayer that traps highly coordinating atoms such as transition metals (TMs) or noble metals. All deposited atoms assume exactly the same specific sevenfold coordinated subsurface interstitial site while the surface topography remains nearly unchanged. Notably, 3d TMs show a barrier-free incorporation. The observed surface modification by barrier-free subsorption helps to suppress aggregation in clusters. It allows a tuning of the electronic properties not only for the pure Bi(111) surface, but may also be observed for topological insulators formed by substrate-stabilized Bi bilayers.

ASJC Scopus Sachgebiete

Zitieren

Barrier-free subsurface incorporation of 3d metal atoms into Bi(111) films. / Klein, Claudius; Vollmers, N. J.; Gerstmann, U. et al.
in: Physical Review B - Condensed Matter and Materials Physics, Jahrgang 91, Nr. 19, 195441, 27.05.2015.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Klein, C, Vollmers, NJ, Gerstmann, U, Zahl, P, Lükermann, D, Jnawali, G, Pfnür, H, Tegenkamp, C, Sutter, P, Schmidt, WG & Horn-Von Hoegen, M 2015, 'Barrier-free subsurface incorporation of 3d metal atoms into Bi(111) films', Physical Review B - Condensed Matter and Materials Physics, Jg. 91, Nr. 19, 195441. https://doi.org/10.1103/PhysRevB.91.195441
Klein, C., Vollmers, N. J., Gerstmann, U., Zahl, P., Lükermann, D., Jnawali, G., Pfnür, H., Tegenkamp, C., Sutter, P., Schmidt, W. G., & Horn-Von Hoegen, M. (2015). Barrier-free subsurface incorporation of 3d metal atoms into Bi(111) films. Physical Review B - Condensed Matter and Materials Physics, 91(19), Artikel 195441. https://doi.org/10.1103/PhysRevB.91.195441
Klein C, Vollmers NJ, Gerstmann U, Zahl P, Lükermann D, Jnawali G et al. Barrier-free subsurface incorporation of 3d metal atoms into Bi(111) films. Physical Review B - Condensed Matter and Materials Physics. 2015 Mai 27;91(19):195441. doi: 10.1103/PhysRevB.91.195441
Klein, Claudius ; Vollmers, N. J. ; Gerstmann, U. et al. / Barrier-free subsurface incorporation of 3d metal atoms into Bi(111) films. in: Physical Review B - Condensed Matter and Materials Physics. 2015 ; Jahrgang 91, Nr. 19.
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AU - Gerstmann, U.

AU - Zahl, P.

AU - Lükermann, Daniel

AU - Jnawali, G.

AU - Pfnür, Herbert

AU - Tegenkamp, Christoph

AU - Sutter, P.

AU - Schmidt, Wolf Gero

AU - Horn-Von Hoegen, M.

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