Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 2716-2721 |
| Seitenumfang | 6 |
| Fachzeitschrift | Journal of applied physics |
| Jahrgang | 84 |
| Ausgabenummer | 5 |
| Publikationsstatus | Veröffentlicht - 1 Sept. 1998 |
| Extern publiziert | Ja |
Abstract
An estimation for the band offsets and the fundamental band gap will be presented for Si1-x-yGexCy alloys tensile or compressive strained on Si(001). This estimation considers both the band lineup at the interface of two different materials as well as the strain effects. Unknown material parameters have been adjusted to obtain the best agreement with experimental results for tensile strained Si1-yCy layers. The obtained results agree very well with the first experimental data for the effect of C on band-structure properties in Si1-x-yGexCy. For a completely strain-compensated (cubic) Si1-x-yGexCy layer, we predict significant "Ge effects" (smaller gap than Si, valence-band offset to Si) with values depending on the Ge content.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
in: Journal of applied physics, Jahrgang 84, Nr. 5, 01.09.1998, S. 2716-2721.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Band-gap changes and band offsets for ternary Si1-x-yGexCy alloys on Si(001)
AU - Osten, H. Jörg
PY - 1998/9/1
Y1 - 1998/9/1
N2 - An estimation for the band offsets and the fundamental band gap will be presented for Si1-x-yGexCy alloys tensile or compressive strained on Si(001). This estimation considers both the band lineup at the interface of two different materials as well as the strain effects. Unknown material parameters have been adjusted to obtain the best agreement with experimental results for tensile strained Si1-yCy layers. The obtained results agree very well with the first experimental data for the effect of C on band-structure properties in Si1-x-yGexCy. For a completely strain-compensated (cubic) Si1-x-yGexCy layer, we predict significant "Ge effects" (smaller gap than Si, valence-band offset to Si) with values depending on the Ge content.
AB - An estimation for the band offsets and the fundamental band gap will be presented for Si1-x-yGexCy alloys tensile or compressive strained on Si(001). This estimation considers both the band lineup at the interface of two different materials as well as the strain effects. Unknown material parameters have been adjusted to obtain the best agreement with experimental results for tensile strained Si1-yCy layers. The obtained results agree very well with the first experimental data for the effect of C on band-structure properties in Si1-x-yGexCy. For a completely strain-compensated (cubic) Si1-x-yGexCy layer, we predict significant "Ge effects" (smaller gap than Si, valence-band offset to Si) with values depending on the Ge content.
UR - http://www.scopus.com/inward/record.url?scp=1142267920&partnerID=8YFLogxK
U2 - 10.1063/1.368383
DO - 10.1063/1.368383
M3 - Article
AN - SCOPUS:1142267920
VL - 84
SP - 2716
EP - 2721
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
IS - 5
ER -