Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 192105 |
| Fachzeitschrift | Applied physics letters |
| Jahrgang | 93 |
| Ausgabenummer | 19 |
| Publikationsstatus | Veröffentlicht - 11 Nov. 2008 |
Abstract
Internal photoemission of electrons and holes into cubic Nd 2O3 epitaxially grown on (100)Si reveals a significant contribution of Nd 4f states to the spectrum of the oxide gap states. In contrast to oxides of other rare earth (RE) elements (Gd, Lu) epitaxially grown in the same cubic polymorph, to hexagonal LaLuO3, and to polycrystalline HfO2, the occupied Nd 4f states produce an additional filled band 0.8 eV above the O2p derived valence band. The unoccupied portion of the Nd 4f shell leads to empty electron states in the energy range of 1 eV below the RE 5d derived oxide conduction band. The exposed Nd 4f states suggest the possibility to use this metal and, possibly, other REs with low f -shell occupancy to control the interface band offsets by selective interface doping.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik und Astronomie (sonstige)
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in: Applied physics letters, Jahrgang 93, Nr. 19, 192105, 11.11.2008.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Band offsets between Si and epitaxial rare earth sesquioxides (RE 2O3, RE=La,Nd,Gd,Lu)
T2 - Effect of 4f -shell occupancy
AU - Afanas'ev, V. V.
AU - Badylevich, M.
AU - Stesmans, A.
AU - Laha, A.
AU - Osten, H. J.
AU - Fissel, A.
AU - Tian, W.
AU - Edge, L. F.
AU - Schlom, D. G.
N1 - Funding Information: The work done at KU Leuven was supported by the “Fonds voor Wetenschappelijk Onderzoek (FWO) Vlaanderen” through Grant No. 1.5.057.07.
PY - 2008/11/11
Y1 - 2008/11/11
N2 - Internal photoemission of electrons and holes into cubic Nd 2O3 epitaxially grown on (100)Si reveals a significant contribution of Nd 4f states to the spectrum of the oxide gap states. In contrast to oxides of other rare earth (RE) elements (Gd, Lu) epitaxially grown in the same cubic polymorph, to hexagonal LaLuO3, and to polycrystalline HfO2, the occupied Nd 4f states produce an additional filled band 0.8 eV above the O2p derived valence band. The unoccupied portion of the Nd 4f shell leads to empty electron states in the energy range of 1 eV below the RE 5d derived oxide conduction band. The exposed Nd 4f states suggest the possibility to use this metal and, possibly, other REs with low f -shell occupancy to control the interface band offsets by selective interface doping.
AB - Internal photoemission of electrons and holes into cubic Nd 2O3 epitaxially grown on (100)Si reveals a significant contribution of Nd 4f states to the spectrum of the oxide gap states. In contrast to oxides of other rare earth (RE) elements (Gd, Lu) epitaxially grown in the same cubic polymorph, to hexagonal LaLuO3, and to polycrystalline HfO2, the occupied Nd 4f states produce an additional filled band 0.8 eV above the O2p derived valence band. The unoccupied portion of the Nd 4f shell leads to empty electron states in the energy range of 1 eV below the RE 5d derived oxide conduction band. The exposed Nd 4f states suggest the possibility to use this metal and, possibly, other REs with low f -shell occupancy to control the interface band offsets by selective interface doping.
UR - http://www.scopus.com/inward/record.url?scp=56249117674&partnerID=8YFLogxK
U2 - 10.1063/1.3003872
DO - 10.1063/1.3003872
M3 - Article
AN - SCOPUS:56249117674
VL - 93
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 19
M1 - 192105
ER -